摘要
To explore the application of a behavior-level simulation method in the study of the total dose effect of an electronic system, this paper first proposes a behavior-level simulation method based on the VHDL-AMS language in different dimensions, considering operational amplifiers, comparators, and analog-to-digital converters, as the research subjects and subsequently verifying the model accuracy. In addition, according to the interconnection among devices, circuits, and modules, the behavior-level simulation model of the total dose effect of a typical electronic system is constructed, realizing the simulation of the total dose effect. The result is in good agreement with the experimental results. The behavior-level-based simulation modeling can simplify the difficulty of modeling the total dose effect of a system, realizing a suitable radiation-sensitive positioning of the system and reproduction of the damage law. It has good application value, providing technical support for the radiation-resistant reinforcement design and radiation-resistant performance prediction of the space electronic system.
| 投稿的翻译标题 | Behavior-level simulation of the total dose effect of an electronic system |
|---|---|
| 源语言 | 繁体中文 |
| 页(从-至) | 1553-1558 |
| 页数 | 6 |
| 期刊 | Harbin Gongcheng Daxue Xuebao/Journal of Harbin Engineering University |
| 卷 | 43 |
| 期 | 11 |
| DOI | |
| 出版状态 | 已出版 - 11月 2022 |
| 已对外发布 | 是 |
关键词
- ionizing radiation
- model
- operational amplifier
- simulation
- system
- total dose effect
- voltage comparator
- γ-ray
学术指纹
探究 '典型电子系统总剂量效应行为级仿真' 的科研主题。它们共同构成独一无二的指纹。引用此
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