XPS and AES investigation of GaN films grown by MBE

Jin She Yuan; Guang De Chen; Ming Qi; Ai Zhen Li; Zhuo Xu

XPS and AES investigation of GaN films grown by MBE

Jin She Yuan
, Guang De Chen
, Ming Qi
, Ai Zhen Li
, Zhuo Xu

Faculty of Electronic and Information Engineering

Xi'an Jiaotong University
Xi'an University of Technology
CAS - Shanghai Institute of Microsystem and Information Technology

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The surface composition of GaN grown by plasma-assisted MBE was investigated using X-ray photoelectron spectroscopy and Auger election emission spectroscopy(AES), while the depth profile was analyzed by AES with Ar iron sputtering. The experimental results indicated that unintentional doped semi-in salating films formed by plasma-assisted MBE had a rich-gallium surface. It was found that the impurity carbon was chiefly adsorbed onto the surface while oxygen diffused into the bulk to distribute in a certain depth. Consequendy, the oxygen-related impurity band and an acceptor level could be simultaneously formed in the layer. This influenced the optical and electrical properties of the films.

Original language	English
Pages (from-to)	2432-2433
Number of pages	2
Journal	Wuli Xuebao/Acta Physica Sinica
Volume	50
Issue number	12
State	Published - Dec 2001

Keywords

AES
GaN film
Surface analysis
XPS

Cite this

@article{93c445fd97e84f258e195dc9476b1958,

title = "XPS and AES investigation of GaN films grown by MBE",

abstract = "The surface composition of GaN grown by plasma-assisted MBE was investigated using X-ray photoelectron spectroscopy and Auger election emission spectroscopy(AES), while the depth profile was analyzed by AES with Ar iron sputtering. The experimental results indicated that unintentional doped semi-in salating films formed by plasma-assisted MBE had a rich-gallium surface. It was found that the impurity carbon was chiefly adsorbed onto the surface while oxygen diffused into the bulk to distribute in a certain depth. Consequendy, the oxygen-related impurity band and an acceptor level could be simultaneously formed in the layer. This influenced the optical and electrical properties of the films.",

keywords = "AES, GaN film, Surface analysis, XPS",

author = "Yuan, \{Jin She\} and Chen, \{Guang De\} and Ming Qi and Li, \{Ai Zhen\} and Zhuo Xu",

year = "2001",

month = dec,

language = "英语",

volume = "50",

pages = "2432--2433",

journal = "Wuli Xuebao/Acta Physica Sinica",

issn = "1000-3290",

publisher = "Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences",

number = "12",

}

TY - JOUR

T1 - XPS and AES investigation of GaN films grown by MBE

AU - Yuan, Jin She

AU - Chen, Guang De

AU - Qi, Ming

AU - Li, Ai Zhen

AU - Xu, Zhuo

PY - 2001/12

Y1 - 2001/12

N2 - The surface composition of GaN grown by plasma-assisted MBE was investigated using X-ray photoelectron spectroscopy and Auger election emission spectroscopy(AES), while the depth profile was analyzed by AES with Ar iron sputtering. The experimental results indicated that unintentional doped semi-in salating films formed by plasma-assisted MBE had a rich-gallium surface. It was found that the impurity carbon was chiefly adsorbed onto the surface while oxygen diffused into the bulk to distribute in a certain depth. Consequendy, the oxygen-related impurity band and an acceptor level could be simultaneously formed in the layer. This influenced the optical and electrical properties of the films.

AB - The surface composition of GaN grown by plasma-assisted MBE was investigated using X-ray photoelectron spectroscopy and Auger election emission spectroscopy(AES), while the depth profile was analyzed by AES with Ar iron sputtering. The experimental results indicated that unintentional doped semi-in salating films formed by plasma-assisted MBE had a rich-gallium surface. It was found that the impurity carbon was chiefly adsorbed onto the surface while oxygen diffused into the bulk to distribute in a certain depth. Consequendy, the oxygen-related impurity band and an acceptor level could be simultaneously formed in the layer. This influenced the optical and electrical properties of the films.

KW - AES

KW - GaN film

KW - Surface analysis

KW - XPS

UR - https://www.scopus.com/pages/publications/0042338383

M3 - 文章

AN - SCOPUS:0042338383

SN - 1000-3290

VL - 50

SP - 2432

EP - 2433

JO - Wuli Xuebao/Acta Physica Sinica

JF - Wuli Xuebao/Acta Physica Sinica

IS - 12

ER -

XPS and AES investigation of GaN films grown by MBE

Abstract

Keywords

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