XPS Analysis of SiC Films Prepared by Radio Frequency Plasma Sputtering

Y. Y. Wang; K. Kusumoto; C. J. Li

doi:10.1016/j.phpro.2012.03.524

XPS Analysis of SiC Films Prepared by Radio Frequency Plasma Sputtering

Y. Y. Wang
, K. Kusumoto
, C. J. Li

School of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

82 Scopus citations

Abstract

SiC films were deposited by radio frequency (r.f.) plasma sputtering (SPF-312H) on Ti6Al4 V substrate with a pre-deposited Cr bond layer. The effects of sputtering parameters on the microstructure and the chemical bonds of the SiC films were investigated using X-ray photoelectron spectroscope (XPS, Perkin Elmer ESCA5600), atomic force microscopy (AFM, HITACHI WAO200), scanning electronic microscopy (SEM, JEOL JSM-5310) and X-ray diffraction (XRD RIGAKU RINT 2000/PC). The Vickers microhardness of the films was examined by a microhardness tester (MVK-H2) equipped a microscope with a magnification of 1000 at 25 gf loads. It was found that the sputtered Si-C films are amorphous on Ti6Al4 V under the present deposition conditions. According to XPS analysis, the films almost consist of higher energy C-Si bonds under the higher power and lower chamber pressure. The bond structure hypothesis is well consistent with our previously achieved experimental observations concerning the evolution of surface roughness and microhardness with varying the sputtering power and chamber pressure.

Original language	English
Title of host publication	18th International Vacuum Congress, IVC 2010
Editors	Feng Pan, Xu Chen
Publisher	Elsevier B.V.
Pages	95-102
Number of pages	8
ISBN (Electronic)	9781627487481
DOIs	https://doi.org/10.1016/j.phpro.2012.03.524
State	Published - 2012
Event	18th International Vacuum Congress, IVC 2010 - Beijing, China Duration: 23 Aug 2010 → 27 Aug 2010

Publication series

Name	Physics Procedia
Volume	32
ISSN (Print)	1875-3884
ISSN (Electronic)	1875-3892

Conference

Conference	18th International Vacuum Congress, IVC 2010
Country/Territory	China
City	Beijing
Period	23/08/10 → 27/08/10

Keywords

Chemical bond
Film
Radio frequency plasma sputtering
SiC
XPS

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10.1016/j.phpro.2012.03.524

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@inproceedings{23ac1ff4aa324dc9a71afb31385877f9,

title = "XPS Analysis of SiC Films Prepared by Radio Frequency Plasma Sputtering",

abstract = "SiC films were deposited by radio frequency (r.f.) plasma sputtering (SPF-312H) on Ti6Al4 V substrate with a pre-deposited Cr bond layer. The effects of sputtering parameters on the microstructure and the chemical bonds of the SiC films were investigated using X-ray photoelectron spectroscope (XPS, Perkin Elmer ESCA5600), atomic force microscopy (AFM, HITACHI WAO200), scanning electronic microscopy (SEM, JEOL JSM-5310) and X-ray diffraction (XRD RIGAKU RINT 2000/PC). The Vickers microhardness of the films was examined by a microhardness tester (MVK-H2) equipped a microscope with a magnification of 1000 at 25 gf loads. It was found that the sputtered Si-C films are amorphous on Ti6Al4 V under the present deposition conditions. According to XPS analysis, the films almost consist of higher energy C-Si bonds under the higher power and lower chamber pressure. The bond structure hypothesis is well consistent with our previously achieved experimental observations concerning the evolution of surface roughness and microhardness with varying the sputtering power and chamber pressure.",

keywords = "Chemical bond, Film, Radio frequency plasma sputtering, SiC, XPS",

author = "Wang, \{Y. Y.\} and K. Kusumoto and Li, \{C. J.\}",

note = "Publisher Copyright: {\textcopyright} 2012 Published by Elsevier B.V.; 18th International Vacuum Congress, IVC 2010 ; Conference date: 23-08-2010 Through 27-08-2010",

year = "2012",

doi = "10.1016/j.phpro.2012.03.524",

language = "英语",

series = "Physics Procedia",

publisher = "Elsevier B.V.",

pages = "95--102",

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booktitle = "18th International Vacuum Congress, IVC 2010",

}

TY - GEN

T1 - XPS Analysis of SiC Films Prepared by Radio Frequency Plasma Sputtering

AU - Wang, Y. Y.

AU - Kusumoto, K.

AU - Li, C. J.

PY - 2012

Y1 - 2012

N2 - SiC films were deposited by radio frequency (r.f.) plasma sputtering (SPF-312H) on Ti6Al4 V substrate with a pre-deposited Cr bond layer. The effects of sputtering parameters on the microstructure and the chemical bonds of the SiC films were investigated using X-ray photoelectron spectroscope (XPS, Perkin Elmer ESCA5600), atomic force microscopy (AFM, HITACHI WAO200), scanning electronic microscopy (SEM, JEOL JSM-5310) and X-ray diffraction (XRD RIGAKU RINT 2000/PC). The Vickers microhardness of the films was examined by a microhardness tester (MVK-H2) equipped a microscope with a magnification of 1000 at 25 gf loads. It was found that the sputtered Si-C films are amorphous on Ti6Al4 V under the present deposition conditions. According to XPS analysis, the films almost consist of higher energy C-Si bonds under the higher power and lower chamber pressure. The bond structure hypothesis is well consistent with our previously achieved experimental observations concerning the evolution of surface roughness and microhardness with varying the sputtering power and chamber pressure.

AB - SiC films were deposited by radio frequency (r.f.) plasma sputtering (SPF-312H) on Ti6Al4 V substrate with a pre-deposited Cr bond layer. The effects of sputtering parameters on the microstructure and the chemical bonds of the SiC films were investigated using X-ray photoelectron spectroscope (XPS, Perkin Elmer ESCA5600), atomic force microscopy (AFM, HITACHI WAO200), scanning electronic microscopy (SEM, JEOL JSM-5310) and X-ray diffraction (XRD RIGAKU RINT 2000/PC). The Vickers microhardness of the films was examined by a microhardness tester (MVK-H2) equipped a microscope with a magnification of 1000 at 25 gf loads. It was found that the sputtered Si-C films are amorphous on Ti6Al4 V under the present deposition conditions. According to XPS analysis, the films almost consist of higher energy C-Si bonds under the higher power and lower chamber pressure. The bond structure hypothesis is well consistent with our previously achieved experimental observations concerning the evolution of surface roughness and microhardness with varying the sputtering power and chamber pressure.

KW - Chemical bond

KW - Film

KW - Radio frequency plasma sputtering

KW - SiC

KW - XPS

UR - https://www.scopus.com/pages/publications/85014947026

U2 - 10.1016/j.phpro.2012.03.524

DO - 10.1016/j.phpro.2012.03.524

M3 - 会议稿件

AN - SCOPUS:85014947026

T3 - Physics Procedia

SP - 95

EP - 102

BT - 18th International Vacuum Congress, IVC 2010

A2 - Pan, Feng

A2 - Chen, Xu

PB - Elsevier B.V.

T2 - 18th International Vacuum Congress, IVC 2010

Y2 - 23 August 2010 through 27 August 2010

ER -

XPS Analysis of SiC Films Prepared by Radio Frequency Plasma Sputtering

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