TY - JOUR
T1 - X-ray detection performance of vertical Schottky photodiodes based on a bulk β-Ga2O3 substrate grown by an EFG method
AU - Lu, Xing
AU - Zhou, Leidang
AU - Chen, Liang
AU - Ouyang, Xiaoping
AU - Tang, Huili
AU - Liu, Bo
AU - Xu, Jun
N1 - Publisher Copyright:
© The Author(s) 2019.
PY - 2019
Y1 - 2019
N2 - In this study, we investigated the X-ray detection capabilities of vertical β-Ga2O3 Schottky photodiodes on a bulk (100) β-Ga2O3 substrate that was grown by an edge-defined film-fed growth (EFG) method. Both the static and transient responses of the fabricated detectors to X-ray illumination were characterized, and a strong trap-related photoconductive effect was observed in addition to the photovoltaic mechanism. The responsivity of the detectors was calculated to be 1.8 μC/Gy at a reverse bias of −25.8 V. The response time was studied though fitting the transient photocurrent using the exponential decay functions. Associated with material characterizations, it was revealed that the existence of oxygen vacancies within the β-Ga2O3 substrate weakened the performances of the X-ray detectors, mainly their sensitivity and response speed.
AB - In this study, we investigated the X-ray detection capabilities of vertical β-Ga2O3 Schottky photodiodes on a bulk (100) β-Ga2O3 substrate that was grown by an edge-defined film-fed growth (EFG) method. Both the static and transient responses of the fabricated detectors to X-ray illumination were characterized, and a strong trap-related photoconductive effect was observed in addition to the photovoltaic mechanism. The responsivity of the detectors was calculated to be 1.8 μC/Gy at a reverse bias of −25.8 V. The response time was studied though fitting the transient photocurrent using the exponential decay functions. Associated with material characterizations, it was revealed that the existence of oxygen vacancies within the β-Ga2O3 substrate weakened the performances of the X-ray detectors, mainly their sensitivity and response speed.
UR - https://www.scopus.com/pages/publications/85072080179
U2 - 10.1149/2.0071907jss
DO - 10.1149/2.0071907jss
M3 - 文章
AN - SCOPUS:85072080179
SN - 2162-8769
VL - 8
SP - Q3046-Q3049
JO - ECS Journal of Solid State Science and Technology
JF - ECS Journal of Solid State Science and Technology
IS - 7
ER -
