TY - GEN
T1 - Wideband RF-MEMS shunt switches with high reliability for microwave and millimeter wave applications
AU - Onodera, Kazumasa
AU - Zhang, Yi
AU - Maeda, Ryutaro
PY - 2005
Y1 - 2005
N2 - A ultra wideband RF-MEMS shunt switch with a PZT/HfO2 stacked insulator has been developed for microwave and millimeter wave applications. The both of the conjunctive dielectric constant, 80, of PZT(r=800)/HfO 2(r=20)stack layer and a match circuit contribute to high isolation of-30dB at ultra wideband from IGHZ to 50 GHZ frequencies. The increase of the trap density in the HfO2 layer caused from carrier injection from the electrode of the switch into the insulator is smaller than that of silicon nitride(Si3N4) under constant voltage stress resulting in the suppression of the stiction of the switch. The percolation and annealing model is analytically introduced to explain the lower trap density and higher stress-endurance characteristics of HfO2 than Si3N4 usually used as switch insulator. The projected lifetime of the witch with the stacked layer is more than 10 years. This is the best data ever reported.
AB - A ultra wideband RF-MEMS shunt switch with a PZT/HfO2 stacked insulator has been developed for microwave and millimeter wave applications. The both of the conjunctive dielectric constant, 80, of PZT(r=800)/HfO 2(r=20)stack layer and a match circuit contribute to high isolation of-30dB at ultra wideband from IGHZ to 50 GHZ frequencies. The increase of the trap density in the HfO2 layer caused from carrier injection from the electrode of the switch into the insulator is smaller than that of silicon nitride(Si3N4) under constant voltage stress resulting in the suppression of the stiction of the switch. The percolation and annealing model is analytically introduced to explain the lower trap density and higher stress-endurance characteristics of HfO2 than Si3N4 usually used as switch insulator. The projected lifetime of the witch with the stacked layer is more than 10 years. This is the best data ever reported.
UR - https://www.scopus.com/pages/publications/33749606061
U2 - 10.1109/WAMIC.2005.1528418
DO - 10.1109/WAMIC.2005.1528418
M3 - 会议稿件
AN - SCOPUS:33749606061
SN - 0780388615
SN - 9780780388611
T3 - 2005 IEEE Annual Conference on Wireless and Microwave Technology, WAMICON 2005 - Conference Proceedings
SP - 215
EP - 218
BT - 2005 IEEE Annual Conference on Wireless and Microwave Technology, WAMICON 2005 - Conference Proceedings
T2 - 2005 IEEE Annual Conference on Wireless and Microwave Technology, WAMICON 2005
Y2 - 6 April 2005 through 7 April 2005
ER -