Skip to main navigation Skip to search Skip to main content

Wide spectrum responsivity detectors from visible to mid-infrared based on antimonide

  • Chunyan Guo
  • , Yaoyao Sun
  • , Qingxuan Jia
  • , Zhi Jiang
  • , Dongwei Jiang
  • , Guowei Wang
  • , Yingqiang Xu
  • , Tao Wang
  • , Jinshou Tian
  • , Zhaoxin Wu
  • , Zhichuan Niu
  • CAS - Xi'an Institute of Optics and Precision Mechanics
  • Xi'an Jiaotong University
  • University of Chinese Academy of Sciences
  • CAS - Institute of Semiconductors

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

A kind of wide spectrum infrared detectors based on InAs/GaSb type-II superlattices (T2SLs) operating from 0.5 μm to 5 μm wavelength range is reported. The materials were grown by Molecular Beam Epitaxy (MBE) on GaSb substrates. Diverse types and sizes microstructure are fabricated on the surface of the detector to form the photon traps (PTs) array. PTs decrease the reflectivity and increase the light absorption of epitaxial material. Compared with the planar mesa detectors without antireflection (AR) film, detectors with PTs array exhibits a high responsivity of 0.86 A/W at 1160 nm and maximum D* reaches to 109 cm Hz1/2/W in visible wavelength. Also, the PTs processed on detector augment spectral response and QE in infrared wavelength. The peak responsivity of the detector with PTs is to 1.35 A/W and QE can exceed to 0.76 in the infrared wavelength. The infrared detector with PTs is attractive for numerous applications.

Original languageEnglish
Pages (from-to)1-6
Number of pages6
JournalInfrared Physics and Technology
Volume96
DOIs
StatePublished - Jan 2019

Keywords

  • InAs/GaSb type-II superlattices (T2SLs)
  • Photon traps (PTs) array
  • Wide spectrum infrared detector

Fingerprint

Dive into the research topics of 'Wide spectrum responsivity detectors from visible to mid-infrared based on antimonide'. Together they form a unique fingerprint.

Cite this