White-light-controlled resistive switching and photovoltaic effects in TiO2/ZnO composite nanorods array at room temperature

Bai Sun; Wenxi Zhao; Yonghong Liu; Peng Chen

doi:10.1007/s10854-014-2165-y

White-light-controlled resistive switching and photovoltaic effects in TiO₂/ZnO composite nanorods array at room temperature

Bai Sun
, Wenxi Zhao
, Yonghong Liu
, Peng Chen

Southwest University

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

White-light-controlled resistance switching and photovoltaic effects in TiO₂/ZnO composite nanorods array grown on fluorine-doped tin oxide (FTO) substrate by hydrothermal process were investigated. The average length of TiO₂/ZnO nanorods is about 3 μm, and the average diameter is about 200 nm. ZnO nanoparticles with size 5–10 nm are embedded in TiO₂ base material. The current–voltage characteristics of Ag/[TiO₂/ZnO]/FTO device demonstrate an outstanding rectifying property and bipolar resistive switching behavior. Specially, the resistive switching behavior can be regulated by white-light illuminating. In addition, this structure also exhibits a substantial white-light photovoltaic effect. This study is helpful for exploring the multifunctional materials and their applications in nonvolatile multistate memory devices and solar cells.

Original language	English
Pages (from-to)	4306-4311
Number of pages	6
Journal	Journal of Materials Science: Materials in Electronics
Volume	25
Issue number	10
DOIs	https://doi.org/10.1007/s10854-014-2165-y
State	Published - Oct 2014
Externally published	Yes

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SDG 7 Affordable and Clean Energy

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10.1007/s10854-014-2165-y

Cite this

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title = "White-light-controlled resistive switching and photovoltaic effects in TiO2/ZnO composite nanorods array at room temperature",

abstract = "White-light-controlled resistance switching and photovoltaic effects in TiO2/ZnO composite nanorods array grown on fluorine-doped tin oxide (FTO) substrate by hydrothermal process were investigated. The average length of TiO2/ZnO nanorods is about 3 μm, and the average diameter is about 200 nm. ZnO nanoparticles with size 5–10 nm are embedded in TiO2 base material. The current–voltage characteristics of Ag/[TiO2/ZnO]/FTO device demonstrate an outstanding rectifying property and bipolar resistive switching behavior. Specially, the resistive switching behavior can be regulated by white-light illuminating. In addition, this structure also exhibits a substantial white-light photovoltaic effect. This study is helpful for exploring the multifunctional materials and their applications in nonvolatile multistate memory devices and solar cells.",

author = "Bai Sun and Wenxi Zhao and Yonghong Liu and Peng Chen",

note = "Publisher Copyright: {\textcopyright} 2014, Springer Science+Business Media New York.",

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doi = "10.1007/s10854-014-2165-y",

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AU - Sun, Bai

AU - Zhao, Wenxi

AU - Liu, Yonghong

AU - Chen, Peng

PY - 2014/10

Y1 - 2014/10

N2 - White-light-controlled resistance switching and photovoltaic effects in TiO2/ZnO composite nanorods array grown on fluorine-doped tin oxide (FTO) substrate by hydrothermal process were investigated. The average length of TiO2/ZnO nanorods is about 3 μm, and the average diameter is about 200 nm. ZnO nanoparticles with size 5–10 nm are embedded in TiO2 base material. The current–voltage characteristics of Ag/[TiO2/ZnO]/FTO device demonstrate an outstanding rectifying property and bipolar resistive switching behavior. Specially, the resistive switching behavior can be regulated by white-light illuminating. In addition, this structure also exhibits a substantial white-light photovoltaic effect. This study is helpful for exploring the multifunctional materials and their applications in nonvolatile multistate memory devices and solar cells.

AB - White-light-controlled resistance switching and photovoltaic effects in TiO2/ZnO composite nanorods array grown on fluorine-doped tin oxide (FTO) substrate by hydrothermal process were investigated. The average length of TiO2/ZnO nanorods is about 3 μm, and the average diameter is about 200 nm. ZnO nanoparticles with size 5–10 nm are embedded in TiO2 base material. The current–voltage characteristics of Ag/[TiO2/ZnO]/FTO device demonstrate an outstanding rectifying property and bipolar resistive switching behavior. Specially, the resistive switching behavior can be regulated by white-light illuminating. In addition, this structure also exhibits a substantial white-light photovoltaic effect. This study is helpful for exploring the multifunctional materials and their applications in nonvolatile multistate memory devices and solar cells.

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M3 - 文章

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JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

IS - 10

ER -

White-light-controlled resistive switching and photovoltaic effects in TiO₂/ZnO composite nanorods array at room temperature

Abstract

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