Whispering gallery mode lasing from InGaN/GaN quantum well microtube

Yufeng Li; Lungang Feng; Xilin Su; Qiang Li; Feng Yun; Ge Yuan; Jung Han

doi:10.1364/OE.25.018072

Whispering gallery mode lasing from InGaN/GaN quantum well microtube

Yufeng Li
, Lungang Feng
, Xilin Su
, Qiang Li
, Feng Yun
, Ge Yuan
, Jung Han

Faculty of Electronic and Information Engineering

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

In this work, we have successfully fabricated microtubes by strain-induced self-rolling of a InGaN/GaN quantum wells nanomembrane. Freestanding quantum wells microtubes, with a diameter of 6 µm and wall thickness of 50 nm, are formed when the coherently strained InGaN/GaN quantum wells heterostructure is selectively released from the hosting substrate. Periodic oscillations due to whispering-gallery modes resonance were found superimposed on photoluminescence spectra even at low optical excitation power. With increasing pumping power density, the microtube is characterized by a stimulated emission with a threshold as low as 415 kW/cm². Such emission shows predominant TM polarization parallel to the microtube axis.

Original language	English
Pages (from-to)	18072-18080
Number of pages	9
Journal	Optics Express
Volume	25
Issue number	15
DOIs	https://doi.org/10.1364/OE.25.018072
State	Published - 24 Jul 2017

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title = "Whispering gallery mode lasing from InGaN/GaN quantum well microtube",

abstract = "In this work, we have successfully fabricated microtubes by strain-induced self-rolling of a InGaN/GaN quantum wells nanomembrane. Freestanding quantum wells microtubes, with a diameter of 6 µm and wall thickness of 50 nm, are formed when the coherently strained InGaN/GaN quantum wells heterostructure is selectively released from the hosting substrate. Periodic oscillations due to whispering-gallery modes resonance were found superimposed on photoluminescence spectra even at low optical excitation power. With increasing pumping power density, the microtube is characterized by a stimulated emission with a threshold as low as 415 kW/cm2. Such emission shows predominant TM polarization parallel to the microtube axis.",

author = "Yufeng Li and Lungang Feng and Xilin Su and Qiang Li and Feng Yun and Ge Yuan and Jung Han",

note = "Publisher Copyright: {\textcopyright} 2017 Optical Society of America.",

year = "2017",

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doi = "10.1364/OE.25.018072",

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T1 - Whispering gallery mode lasing from InGaN/GaN quantum well microtube

AU - Li, Yufeng

AU - Feng, Lungang

AU - Su, Xilin

AU - Li, Qiang

AU - Yun, Feng

AU - Yuan, Ge

AU - Han, Jung

PY - 2017/7/24

Y1 - 2017/7/24

N2 - In this work, we have successfully fabricated microtubes by strain-induced self-rolling of a InGaN/GaN quantum wells nanomembrane. Freestanding quantum wells microtubes, with a diameter of 6 µm and wall thickness of 50 nm, are formed when the coherently strained InGaN/GaN quantum wells heterostructure is selectively released from the hosting substrate. Periodic oscillations due to whispering-gallery modes resonance were found superimposed on photoluminescence spectra even at low optical excitation power. With increasing pumping power density, the microtube is characterized by a stimulated emission with a threshold as low as 415 kW/cm2. Such emission shows predominant TM polarization parallel to the microtube axis.

AB - In this work, we have successfully fabricated microtubes by strain-induced self-rolling of a InGaN/GaN quantum wells nanomembrane. Freestanding quantum wells microtubes, with a diameter of 6 µm and wall thickness of 50 nm, are formed when the coherently strained InGaN/GaN quantum wells heterostructure is selectively released from the hosting substrate. Periodic oscillations due to whispering-gallery modes resonance were found superimposed on photoluminescence spectra even at low optical excitation power. With increasing pumping power density, the microtube is characterized by a stimulated emission with a threshold as low as 415 kW/cm2. Such emission shows predominant TM polarization parallel to the microtube axis.

UR - https://www.scopus.com/pages/publications/85025443140

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DO - 10.1364/OE.25.018072

M3 - 文章

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AN - SCOPUS:85025443140

SN - 1094-4087

VL - 25

SP - 18072

EP - 18080

JO - Optics Express

JF - Optics Express

IS - 15

ER -

Whispering gallery mode lasing from InGaN/GaN quantum well microtube

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