Wafer−Scale Growth of Fe−Doped Hexagonal Boron Nitride (hBN) Films via Co−Sputtering

Qiang Li; Qifan Zhang; Ransheng Chen; Haoran Zhang; Mingdi Wang; Jingping Zhu; Xiaoliang Wang; Yuhuai Liu; Feng Yun

doi:10.3390/cryst12060777

Wafer−Scale Growth of Fe−Doped Hexagonal Boron Nitride (hBN) Films via Co−Sputtering

Qiang Li
, Qifan Zhang
, Ransheng Chen
, Haoran Zhang
, Mingdi Wang
, Jingping Zhu
, Xiaoliang Wang
, Yuhuai Liu
, Feng Yun

Faculty of Electronic and Information Engineering

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Fe−doped hBN film has great potential for use in spintronic applications. The wafer scale preparation of Fe−doped hBN films and their material properties are crucial for application in devices. In this work, Fe−doped films with 2−inch wafer scale were fabricated by magnetron co−sputtering, and the properties of the films were characterized. The crystal quality decreased, but the electrical performance was greatly improved. The average square resistance of Fe−doped film was 0.34 KΩ/sqr. Meanwhile, the Fe−doped films kept the characteristics of hBN well. The wavelength of absorption edge was 216 nm, and the corresponding optical band gap of 5.76 eV.

Original language	English
Article number	777
Journal	Crystals
Volume	12
Issue number	6
DOIs	https://doi.org/10.3390/cryst12060777
State	Published - Jun 2022

Keywords

Fe doping film
hexagonal boron nitride
magnetron sputtering

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10.3390/cryst12060777

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title = "Wafer−Scale Growth of Fe−Doped Hexagonal Boron Nitride (hBN) Films via Co−Sputtering",

abstract = "Fe−doped hBN film has great potential for use in spintronic applications. The wafer scale preparation of Fe−doped hBN films and their material properties are crucial for application in devices. In this work, Fe−doped films with 2−inch wafer scale were fabricated by magnetron co−sputtering, and the properties of the films were characterized. The crystal quality decreased, but the electrical performance was greatly improved. The average square resistance of Fe−doped film was 0.34 KΩ/sqr. Meanwhile, the Fe−doped films kept the characteristics of hBN well. The wavelength of absorption edge was 216 nm, and the corresponding optical band gap of 5.76 eV.",

keywords = "Fe doping film, hexagonal boron nitride, magnetron sputtering",

author = "Qiang Li and Qifan Zhang and Ransheng Chen and Haoran Zhang and Mingdi Wang and Jingping Zhu and Xiaoliang Wang and Yuhuai Liu and Feng Yun",

note = "Publisher Copyright: {\textcopyright} 2022 by the authors. Licensee MDPI, Basel, Switzerland.",

year = "2022",

month = jun,

doi = "10.3390/cryst12060777",

language = "英语",

volume = "12",

journal = "Crystals",

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TY - JOUR

T1 - Wafer−Scale Growth of Fe−Doped Hexagonal Boron Nitride (hBN) Films via Co−Sputtering

AU - Li, Qiang

AU - Zhang, Qifan

AU - Chen, Ransheng

AU - Zhang, Haoran

AU - Wang, Mingdi

AU - Zhu, Jingping

AU - Wang, Xiaoliang

AU - Liu, Yuhuai

AU - Yun, Feng

PY - 2022/6

Y1 - 2022/6

N2 - Fe−doped hBN film has great potential for use in spintronic applications. The wafer scale preparation of Fe−doped hBN films and their material properties are crucial for application in devices. In this work, Fe−doped films with 2−inch wafer scale were fabricated by magnetron co−sputtering, and the properties of the films were characterized. The crystal quality decreased, but the electrical performance was greatly improved. The average square resistance of Fe−doped film was 0.34 KΩ/sqr. Meanwhile, the Fe−doped films kept the characteristics of hBN well. The wavelength of absorption edge was 216 nm, and the corresponding optical band gap of 5.76 eV.

AB - Fe−doped hBN film has great potential for use in spintronic applications. The wafer scale preparation of Fe−doped hBN films and their material properties are crucial for application in devices. In this work, Fe−doped films with 2−inch wafer scale were fabricated by magnetron co−sputtering, and the properties of the films were characterized. The crystal quality decreased, but the electrical performance was greatly improved. The average square resistance of Fe−doped film was 0.34 KΩ/sqr. Meanwhile, the Fe−doped films kept the characteristics of hBN well. The wavelength of absorption edge was 216 nm, and the corresponding optical band gap of 5.76 eV.

KW - Fe doping film

KW - hexagonal boron nitride

KW - magnetron sputtering

UR - https://www.scopus.com/pages/publications/85131352019

U2 - 10.3390/cryst12060777

DO - 10.3390/cryst12060777

M3 - 文章

AN - SCOPUS:85131352019

SN - 2073-4352

VL - 12

JO - Crystals

JF - Crystals

IS - 6

M1 - 777

ER -

Wafer−Scale Growth of Fe−Doped Hexagonal Boron Nitride (hBN) Films via Co−Sputtering

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Keywords

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