Voltage tuning of ferromagnetic resonance and linewidth in spinel ferrite/ferroelectric multiferroic heterostructures

Mingmin Zhu; Tianxiang Nan; Ming Liu; Wei Ren; Ziyao Zhou; Nian X. Sun

doi:10.1109/LMAG.2015.2425360

Voltage tuning of ferromagnetic resonance and linewidth in spinel ferrite/ferroelectric multiferroic heterostructures

Mingmin Zhu
, Tianxiang Nan
, Ming Liu
, Wei Ren
, Ziyao Zhou
, Nian X. Sun

Faculty of Electronic and Information Engineering

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

An energy efficient approach is demonstrated to remarkably shift the ferromagnetic resonance (FMR) field by applying an electric field to various spinel ferriteferroelectric multiferroic heterostructures prepared by the low temperature spin-spray technique. The electric field-induced magnetic anisotropy changes, as well as the magnetoelectric (ME) coupling coefficient, were quantitatively determined in all multiferroic heterostructures. The broadness of FMR linewidth upon applying an electric field indicates that inhomogeneous ME coupling takes place, which arises from the ferrroelastic domain switching and polarization elongation. These results provide a framework for realizing compact, light-weight, and ultralow power electronics and microwave devices.

Original language	English
Article number	7091881
Journal	IEEE Magnetics Letters
Volume	6
DOIs	https://doi.org/10.1109/LMAG.2015.2425360
State	Published - 2015

Keywords

Magnetoelectric Coupling
Microwave devices
Multiferroics
Spinel ferrites

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10.1109/LMAG.2015.2425360

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title = "Voltage tuning of ferromagnetic resonance and linewidth in spinel ferrite/ferroelectric multiferroic heterostructures",

abstract = "An energy efficient approach is demonstrated to remarkably shift the ferromagnetic resonance (FMR) field by applying an electric field to various spinel ferriteferroelectric multiferroic heterostructures prepared by the low temperature spin-spray technique. The electric field-induced magnetic anisotropy changes, as well as the magnetoelectric (ME) coupling coefficient, were quantitatively determined in all multiferroic heterostructures. The broadness of FMR linewidth upon applying an electric field indicates that inhomogeneous ME coupling takes place, which arises from the ferrroelastic domain switching and polarization elongation. These results provide a framework for realizing compact, light-weight, and ultralow power electronics and microwave devices.",

keywords = "Magnetoelectric Coupling, Microwave devices, Multiferroics, Spinel ferrites",

author = "Mingmin Zhu and Tianxiang Nan and Ming Liu and Wei Ren and Ziyao Zhou and Sun, \{Nian X.\}",

note = "Publisher Copyright: {\textcopyright} 2010-2012 IEEE.",

year = "2015",

doi = "10.1109/LMAG.2015.2425360",

language = "英语",

volume = "6",

journal = "IEEE Magnetics Letters",

issn = "1949-307X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - Voltage tuning of ferromagnetic resonance and linewidth in spinel ferrite/ferroelectric multiferroic heterostructures

AU - Zhu, Mingmin

AU - Nan, Tianxiang

AU - Liu, Ming

AU - Ren, Wei

AU - Zhou, Ziyao

AU - Sun, Nian X.

PY - 2015

Y1 - 2015

N2 - An energy efficient approach is demonstrated to remarkably shift the ferromagnetic resonance (FMR) field by applying an electric field to various spinel ferriteferroelectric multiferroic heterostructures prepared by the low temperature spin-spray technique. The electric field-induced magnetic anisotropy changes, as well as the magnetoelectric (ME) coupling coefficient, were quantitatively determined in all multiferroic heterostructures. The broadness of FMR linewidth upon applying an electric field indicates that inhomogeneous ME coupling takes place, which arises from the ferrroelastic domain switching and polarization elongation. These results provide a framework for realizing compact, light-weight, and ultralow power electronics and microwave devices.

AB - An energy efficient approach is demonstrated to remarkably shift the ferromagnetic resonance (FMR) field by applying an electric field to various spinel ferriteferroelectric multiferroic heterostructures prepared by the low temperature spin-spray technique. The electric field-induced magnetic anisotropy changes, as well as the magnetoelectric (ME) coupling coefficient, were quantitatively determined in all multiferroic heterostructures. The broadness of FMR linewidth upon applying an electric field indicates that inhomogeneous ME coupling takes place, which arises from the ferrroelastic domain switching and polarization elongation. These results provide a framework for realizing compact, light-weight, and ultralow power electronics and microwave devices.

KW - Magnetoelectric Coupling

KW - Microwave devices

KW - Multiferroics

KW - Spinel ferrites

UR - https://www.scopus.com/pages/publications/84933576409

U2 - 10.1109/LMAG.2015.2425360

DO - 10.1109/LMAG.2015.2425360

M3 - 文章

AN - SCOPUS:84933576409

SN - 1949-307X

VL - 6

JO - IEEE Magnetics Letters

JF - IEEE Magnetics Letters

M1 - 7091881

ER -

Voltage tuning of ferromagnetic resonance and linewidth in spinel ferrite/ferroelectric multiferroic heterostructures

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Keywords

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