Voltage-impulse-induced non-volatile ferroelastic switching of ferromagnetic resonance for reconfigurable magnetoelectric microwave devices

Ming Liu; Brandon M. Howe; Lawrence Grazulis; Krishnamurthy Mahalingam; Tianxiang Nan; Nian X. Sun; Gail J. Brown

doi:10.1002/adma.201301989

Voltage-impulse-induced non-volatile ferroelastic switching of ferromagnetic resonance for reconfigurable magnetoelectric microwave devices

Ming Liu
, Brandon M. Howe
, Lawrence Grazulis
, Krishnamurthy Mahalingam
, Tianxiang Nan
, Nian X. Sun
, Gail J. Brown

Research output: Contribution to journal › Article › peer-review

222 Scopus citations

Abstract

A critical challenge in realizing magnetoelectrics based on reconfigurable microwave devices, which is the ability to switch between distinct ferromagnetic resonances (FMR) in a stable, reversible and energy efficient manner, has been addressed. In particular, a voltage-impulse-induced two-step ferroelastic switching pathway can be used to in situ manipulate the magnetic anisotropy and enable non-volatile FMR tuning in FeCoB/PMN-PT (011) multiferroic heterostructures.

Original language	English
Pages (from-to)	4886-4892
Number of pages	7
Journal	Advanced Materials
Volume	25
Issue number	35
DOIs	https://doi.org/10.1002/adma.201301989
State	Published - 20 Sep 2013
Externally published	Yes

Keywords

magnetoelectric composites
microwave devices
multiferroics
non-volatile

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10.1002/adma.201301989

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title = "Voltage-impulse-induced non-volatile ferroelastic switching of ferromagnetic resonance for reconfigurable magnetoelectric microwave devices",

abstract = "A critical challenge in realizing magnetoelectrics based on reconfigurable microwave devices, which is the ability to switch between distinct ferromagnetic resonances (FMR) in a stable, reversible and energy efficient manner, has been addressed. In particular, a voltage-impulse-induced two-step ferroelastic switching pathway can be used to in situ manipulate the magnetic anisotropy and enable non-volatile FMR tuning in FeCoB/PMN-PT (011) multiferroic heterostructures.",

keywords = "magnetoelectric composites, microwave devices, multiferroics, non-volatile",

author = "Ming Liu and Howe, \{Brandon M.\} and Lawrence Grazulis and Krishnamurthy Mahalingam and Tianxiang Nan and Sun, \{Nian X.\} and Brown, \{Gail J.\}",

year = "2013",

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doi = "10.1002/adma.201301989",

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AU - Liu, Ming

AU - Howe, Brandon M.

AU - Grazulis, Lawrence

AU - Mahalingam, Krishnamurthy

AU - Nan, Tianxiang

AU - Sun, Nian X.

AU - Brown, Gail J.

PY - 2013/9/20

Y1 - 2013/9/20

N2 - A critical challenge in realizing magnetoelectrics based on reconfigurable microwave devices, which is the ability to switch between distinct ferromagnetic resonances (FMR) in a stable, reversible and energy efficient manner, has been addressed. In particular, a voltage-impulse-induced two-step ferroelastic switching pathway can be used to in situ manipulate the magnetic anisotropy and enable non-volatile FMR tuning in FeCoB/PMN-PT (011) multiferroic heterostructures.

AB - A critical challenge in realizing magnetoelectrics based on reconfigurable microwave devices, which is the ability to switch between distinct ferromagnetic resonances (FMR) in a stable, reversible and energy efficient manner, has been addressed. In particular, a voltage-impulse-induced two-step ferroelastic switching pathway can be used to in situ manipulate the magnetic anisotropy and enable non-volatile FMR tuning in FeCoB/PMN-PT (011) multiferroic heterostructures.

KW - magnetoelectric composites

KW - microwave devices

KW - multiferroics

KW - non-volatile

UR - https://www.scopus.com/pages/publications/84884909551

U2 - 10.1002/adma.201301989

DO - 10.1002/adma.201301989

M3 - 文章

AN - SCOPUS:84884909551

SN - 0935-9648

VL - 25

SP - 4886

EP - 4892

JO - Advanced Materials

JF - Advanced Materials

IS - 35

ER -

Voltage-impulse-induced non-volatile ferroelastic switching of ferromagnetic resonance for reconfigurable magnetoelectric microwave devices

Abstract

Keywords

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