Visible-extended mid-infrared wide spectrum detector based on InAs/GaSb type-Ⅱ superlattices (T2SL)

  • Chunyan Guo
  • , Yaoyao Sun
  • , Zhe Jia
  • , Zhi Jiang
  • , Yuexi Lv
  • , Hongyue Hao
  • , Xi Han
  • , Yinan Dong
  • , Dongwei Jiang
  • , Guowei Wang
  • , Yingqiang Xu
  • , Tao Wang
  • , Jinshou Tian
  • , Zhaoxin Wu
  • , Zhichuan Niu

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

The authors report an innovative design of wide spectrum detector that can detect visible and mid-infrared spectrum, from 0.4 to 5 μm, simultaneously. The detector is designed with microstructure of various types of photon traps fabricated on mid-infrared InAs/GaSb type-II superlattice materials. Quantum efficiency has been significantly improved due to the action of photon traps which can decrease the reflectivity of the surface of InAs/GaSb type-Ⅱ superlattice down to less than 5%. Under the condition of 77 K and 200 mV bias voltage, the responsivity of the detector is about 0.025–0.45 A/W in the visible wavelength regime of 400–790 nm, more than 0.3 A/W in spectrum of 800–2000 nm, respectively. Through the optimized photon trap structure, the responsivity of detector is to 1.25 A/W and predominantly improve the quantum efficiency of the detector up to 52.5% at 3 μm.

Original languageEnglish
Pages (from-to)147-153
Number of pages7
JournalInfrared Physics and Technology
Volume89
DOIs
StatePublished - Mar 2018

Keywords

  • InAs/GaSb type-Ⅱ superlattice
  • Microstructure
  • Photon traps
  • Wide spectrum detector

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