Violet Arsenic Phosphorus: Switching p-Type into High Performance n-Type Semiconductor by Arsenic Substitution

Rui Zhai; Zhuorui Wen; Xuewen Zhao; Junyi She; Mengyue Gu; Fanqi Bu; Chang Huang; Guodong Meng; Yonghong Cheng; Jinying Zhang

doi:10.1007/s40820-025-01956-1

Violet Arsenic Phosphorus: Switching p-Type into High Performance n-Type Semiconductor by Arsenic Substitution

Rui Zhai
, Zhuorui Wen
, Xuewen Zhao
, Junyi She
, Mengyue Gu
, Fanqi Bu
, Chang Huang
, Guodong Meng
, Yonghong Cheng
, Jinying Zhang

School of Electrical Engineering

Xi'an Jiaotong University
Ltd.

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Violet arsenic phosphorus (VP-As) single crystals were synthesized and characterized by single crystal X-ray diffraction to be P_83.4As_0.6 (CSD-2408761), the P12 is occupied by arsenic/phosphorus as a mixed occupancy site. The p-type VP has been switched into n-type VP-As, the effective electron mass was significantly reduced and resulted in high electron mobility of 2622.503 cm² V⁻¹ s⁻¹. High electron mobility of 137.06 cm² V⁻¹ s⁻¹ has been achieved from field effect transistor, much higher than the hole mobility of VP.

Original language	English
Article number	145
Journal	Nano-Micro Letters
Volume	18
Issue number	1
DOIs	https://doi.org/10.1007/s40820-025-01956-1
State	Published - Dec 2026

Keywords

Arsenic substitution
Field effect transistor
High mobility
n-type semiconductor
Violet phosphorus

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10.1007/s40820-025-01956-1

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title = "Violet Arsenic Phosphorus: Switching p-Type into High Performance n-Type Semiconductor by Arsenic Substitution",

abstract = "Violet arsenic phosphorus (VP-As) single crystals were synthesized and characterized by single crystal X-ray diffraction to be P83.4As0.6 (CSD-2408761), the P12 is occupied by arsenic/phosphorus as a mixed occupancy site. The p-type VP has been switched into n-type VP-As, the effective electron mass was significantly reduced and resulted in high electron mobility of 2622.503 cm2 V−1 s−1. High electron mobility of 137.06 cm2 V−1 s−1 has been achieved from field effect transistor, much higher than the hole mobility of VP.",

keywords = "Arsenic substitution, Field effect transistor, High mobility, n-type semiconductor, Violet phosphorus",

author = "Rui Zhai and Zhuorui Wen and Xuewen Zhao and Junyi She and Mengyue Gu and Fanqi Bu and Chang Huang and Guodong Meng and Yonghong Cheng and Jinying Zhang",

note = "Publisher Copyright: {\textcopyright} The Author(s) 2026.",

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doi = "10.1007/s40820-025-01956-1",

language = "英语",

volume = "18",

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TY - JOUR

T1 - Violet Arsenic Phosphorus

T2 - Switching p-Type into High Performance n-Type Semiconductor by Arsenic Substitution

AU - Zhai, Rui

AU - Wen, Zhuorui

AU - Zhao, Xuewen

AU - She, Junyi

AU - Gu, Mengyue

AU - Bu, Fanqi

AU - Huang, Chang

AU - Meng, Guodong

AU - Cheng, Yonghong

AU - Zhang, Jinying

N1 - Publisher Copyright: © The Author(s) 2026.

PY - 2026/12

Y1 - 2026/12

N2 - Violet arsenic phosphorus (VP-As) single crystals were synthesized and characterized by single crystal X-ray diffraction to be P83.4As0.6 (CSD-2408761), the P12 is occupied by arsenic/phosphorus as a mixed occupancy site. The p-type VP has been switched into n-type VP-As, the effective electron mass was significantly reduced and resulted in high electron mobility of 2622.503 cm2 V−1 s−1. High electron mobility of 137.06 cm2 V−1 s−1 has been achieved from field effect transistor, much higher than the hole mobility of VP.

AB - Violet arsenic phosphorus (VP-As) single crystals were synthesized and characterized by single crystal X-ray diffraction to be P83.4As0.6 (CSD-2408761), the P12 is occupied by arsenic/phosphorus as a mixed occupancy site. The p-type VP has been switched into n-type VP-As, the effective electron mass was significantly reduced and resulted in high electron mobility of 2622.503 cm2 V−1 s−1. High electron mobility of 137.06 cm2 V−1 s−1 has been achieved from field effect transistor, much higher than the hole mobility of VP.

KW - Arsenic substitution

KW - Field effect transistor

KW - High mobility

KW - n-type semiconductor

KW - Violet phosphorus

UR - https://www.scopus.com/pages/publications/105027341220

U2 - 10.1007/s40820-025-01956-1

DO - 10.1007/s40820-025-01956-1

M3 - 文章

AN - SCOPUS:105027341220

SN - 2311-6706

VL - 18

JO - Nano-Micro Letters

JF - Nano-Micro Letters

IS - 1

M1 - 145

ER -

Violet Arsenic Phosphorus: Switching p-Type into High Performance n-Type Semiconductor by Arsenic Substitution

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Keywords

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