TY - GEN
T1 - Variable Gate Voltage Control for Paralleled SiC MOSFETs
AU - Wei, Yuqi
AU - Sweeting, Rosten
AU - Hossain, Md Maksudul
AU - Mhiesan, Haider
AU - Mantooth, Alan
N1 - Publisher Copyright:
© 2020 IEEE.
PY - 2020/9/23
Y1 - 2020/9/23
N2 - Silicon carbide (SiC) MOSFETs have been widely used in different power conversion applications due to their advantages of high switching frequency and low loss. Parallel connection of SiC MOSFET is a cost-effective and necessary solution for high power rating converter. However, due to the differences of devices parameters, imbalance current exists, which may damage the system. In this paper, the issues of the paralleling SiC MOSFETs are well analyzed based on the static characteristics of the devices. Based on the analysis, we can find that the unbalanced transient current caused by the differences of threshold voltages are important and require to be mitigated when paralleling SiC MOSFETs. Then, the operational principles of the proposed variable gate voltage control are presented. Simulation and experiment results are presented and analyzed to validate the effectiveness of the proposed active gate driving method.
AB - Silicon carbide (SiC) MOSFETs have been widely used in different power conversion applications due to their advantages of high switching frequency and low loss. Parallel connection of SiC MOSFET is a cost-effective and necessary solution for high power rating converter. However, due to the differences of devices parameters, imbalance current exists, which may damage the system. In this paper, the issues of the paralleling SiC MOSFETs are well analyzed based on the static characteristics of the devices. Based on the analysis, we can find that the unbalanced transient current caused by the differences of threshold voltages are important and require to be mitigated when paralleling SiC MOSFETs. Then, the operational principles of the proposed variable gate voltage control are presented. Simulation and experiment results are presented and analyzed to validate the effectiveness of the proposed active gate driving method.
KW - SiC MOSFET
KW - parallel operation
KW - unbalanced current
KW - variable gate voltage control
UR - https://www.scopus.com/pages/publications/85102276832
U2 - 10.1109/WiPDAAsia49671.2020.9360253
DO - 10.1109/WiPDAAsia49671.2020.9360253
M3 - 会议稿件
AN - SCOPUS:85102276832
T3 - 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020
BT - 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020
Y2 - 23 September 2020 through 25 September 2020
ER -