Vapor transport deposition of Sb2Se3 thin films for photodetector application

Sen Wen; Xingtian Yin; Haixia Xie; Yuxiao Guo; Jie Liu; Dan Liu; Wenxiu Que; Huan Liu; Weiguo Liu

doi:10.1142/S2010135X20500162

Vapor transport deposition of Sb2Se3 thin films for photodetector application

Sen Wen
, Xingtian Yin
, Haixia Xie
, Yuxiao Guo
, Jie Liu
, Dan Liu
, Wenxiu Que
, Huan Liu
, Weiguo Liu

Faculty of Electronic and Information Engineering

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

Antimony selenide is a promising semiconductor with great application potential in the fields of optoelectronic devices. In this work, the vapor transport deposition (VTD) method is employed to prepare Sb2Se3 films on substrates. The influence of deposition temperature, distance between the Sb2Se3 sources and substrate, and the deposition holding time on the film morphology is investigated in detail. The deposited Sb2Se3 thin film is employed to fabricate photodetector with a structure of ITO/SnO2/Sb2Se3/Au, where the spin-coated SnO2 film is used as the buffer layer. The device demonstrates relative high responsivity in the range of 300-1000nm with a maximum value of 312mA W-1 at 750nm.

Original language	English
Article number	2050016
Journal	Journal of Advanced Dielectrics
Volume	10
Issue number	4
DOIs	https://doi.org/10.1142/S2010135X20500162
State	Published - 1 Aug 2020

Keywords

Sb2Se3
SnO2
photodetector

Access to Document

10.1142/S2010135X20500162

Cite this

@article{ddf39c57316849998eece9148eea2819,

title = "Vapor transport deposition of Sb2Se3 thin films for photodetector application",

abstract = "Antimony selenide is a promising semiconductor with great application potential in the fields of optoelectronic devices. In this work, the vapor transport deposition (VTD) method is employed to prepare Sb2Se3 films on substrates. The influence of deposition temperature, distance between the Sb2Se3 sources and substrate, and the deposition holding time on the film morphology is investigated in detail. The deposited Sb2Se3 thin film is employed to fabricate photodetector with a structure of ITO/SnO2/Sb2Se3/Au, where the spin-coated SnO2 film is used as the buffer layer. The device demonstrates relative high responsivity in the range of 300-1000nm with a maximum value of 312mA W-1 at 750nm.",

keywords = "Sb2Se3, SnO2, photodetector",

author = "Sen Wen and Xingtian Yin and Haixia Xie and Yuxiao Guo and Jie Liu and Dan Liu and Wenxiu Que and Huan Liu and Weiguo Liu",

note = "Publisher Copyright: {\textcopyright} 2020 The Author(s).",

year = "2020",

month = aug,

day = "1",

doi = "10.1142/S2010135X20500162",

language = "英语",

volume = "10",

journal = "Journal of Advanced Dielectrics",

issn = "2010-135X",

publisher = "World Scientific",

number = "4",

}

TY - JOUR

T1 - Vapor transport deposition of Sb2Se3 thin films for photodetector application

AU - Wen, Sen

AU - Yin, Xingtian

AU - Xie, Haixia

AU - Guo, Yuxiao

AU - Liu, Jie

AU - Liu, Dan

AU - Que, Wenxiu

AU - Liu, Huan

AU - Liu, Weiguo

PY - 2020/8/1

Y1 - 2020/8/1

N2 - Antimony selenide is a promising semiconductor with great application potential in the fields of optoelectronic devices. In this work, the vapor transport deposition (VTD) method is employed to prepare Sb2Se3 films on substrates. The influence of deposition temperature, distance between the Sb2Se3 sources and substrate, and the deposition holding time on the film morphology is investigated in detail. The deposited Sb2Se3 thin film is employed to fabricate photodetector with a structure of ITO/SnO2/Sb2Se3/Au, where the spin-coated SnO2 film is used as the buffer layer. The device demonstrates relative high responsivity in the range of 300-1000nm with a maximum value of 312mA W-1 at 750nm.

AB - Antimony selenide is a promising semiconductor with great application potential in the fields of optoelectronic devices. In this work, the vapor transport deposition (VTD) method is employed to prepare Sb2Se3 films on substrates. The influence of deposition temperature, distance between the Sb2Se3 sources and substrate, and the deposition holding time on the film morphology is investigated in detail. The deposited Sb2Se3 thin film is employed to fabricate photodetector with a structure of ITO/SnO2/Sb2Se3/Au, where the spin-coated SnO2 film is used as the buffer layer. The device demonstrates relative high responsivity in the range of 300-1000nm with a maximum value of 312mA W-1 at 750nm.

KW - Sb2Se3

KW - SnO2

KW - photodetector

UR - https://www.scopus.com/pages/publications/85095592182

U2 - 10.1142/S2010135X20500162

DO - 10.1142/S2010135X20500162

M3 - 文章

AN - SCOPUS:85095592182

SN - 2010-135X

VL - 10

JO - Journal of Advanced Dielectrics

JF - Journal of Advanced Dielectrics

IS - 4

M1 - 2050016

ER -

Vapor transport deposition of Sb2Se3 thin films for photodetector application

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this