V-doped ZnO thin films prepared by RF magnetron sputtering

W. D. Shao; X. F. Chen; W. Ren; P. Shi; X. Q. Wu; O. K. Tan; W. G. Zhu; X. Yao

doi:10.1080/00150193.2010.484319

V-doped ZnO thin films prepared by RF magnetron sputtering

W. D. Shao
, X. F. Chen
, W. Ren
, P. Shi
, X. Q. Wu
, O. K. Tan
, W. G. Zhu
, X. Yao

Faculty of Electronic and Information Engineering

Xi'an Jiaotong University
Nanyang Technological University

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

The V-doped ZnO thin films were prepared on Pt/TiO₂/SiO ₂/Si substrate by RF magnetron sputtering for piezoelectric device applications. X-ray diffraction study suggests that the sputtered ZnO thin films are grown in (0002)-preferred orientation, and the c lattice parameter decrease with V content increasing. The dielectric constant of the films is in the range of 9-16 at 1 kHz, and the dielectric loss blow 1%. The J-E characteristic of the films suggests that the field-assisted ionic conduction mechanism is predominant at the lower electric field and trap-controlled space-charge-limited conduction mechanism is predominant at the higher electric field.

Original language	English
Pages (from-to)	10-15
Number of pages	6
Journal	Ferroelectrics
Volume	406
Issue number	1
DOIs	https://doi.org/10.1080/00150193.2010.484319
State	Published - 2010
Event	12th International Meeting on Ferroelectricity, IMF-12 and the 18th IEEE International Symposium on Applications of Ferroelectrics, ISAF-18 - Xi'an, China Duration: 23 Aug 2009 → 27 Aug 2009

Keywords

Piezoelectric
Sputtering
V-doped ZnO films

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10.1080/00150193.2010.484319

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@article{5ab88817a0524380b53dc8bf374a1aaa,

title = "V-doped ZnO thin films prepared by RF magnetron sputtering",

abstract = "The V-doped ZnO thin films were prepared on Pt/TiO2/SiO 2/Si substrate by RF magnetron sputtering for piezoelectric device applications. X-ray diffraction study suggests that the sputtered ZnO thin films are grown in (0002)-preferred orientation, and the c lattice parameter decrease with V content increasing. The dielectric constant of the films is in the range of 9-16 at 1 kHz, and the dielectric loss blow 1\%. The J-E characteristic of the films suggests that the field-assisted ionic conduction mechanism is predominant at the lower electric field and trap-controlled space-charge-limited conduction mechanism is predominant at the higher electric field.",

keywords = "Piezoelectric, Sputtering, V-doped ZnO films",

author = "Shao, \{W. D.\} and Chen, \{X. F.\} and W. Ren and P. Shi and Wu, \{X. Q.\} and Tan, \{O. K.\} and Zhu, \{W. G.\} and X. Yao",

year = "2010",

doi = "10.1080/00150193.2010.484319",

language = "英语",

volume = "406",

pages = "10--15",

journal = "Ferroelectrics",

issn = "0015-0193",

publisher = "Taylor and Francis Ltd.",

number = "1",

note = "12th International Meeting on Ferroelectricity, IMF-12 and the 18th IEEE International Symposium on Applications of Ferroelectrics, ISAF-18 ; Conference date: 23-08-2009 Through 27-08-2009",

}

TY - JOUR

T1 - V-doped ZnO thin films prepared by RF magnetron sputtering

AU - Shao, W. D.

AU - Chen, X. F.

AU - Ren, W.

AU - Shi, P.

AU - Wu, X. Q.

AU - Tan, O. K.

AU - Zhu, W. G.

AU - Yao, X.

PY - 2010

Y1 - 2010

N2 - The V-doped ZnO thin films were prepared on Pt/TiO2/SiO 2/Si substrate by RF magnetron sputtering for piezoelectric device applications. X-ray diffraction study suggests that the sputtered ZnO thin films are grown in (0002)-preferred orientation, and the c lattice parameter decrease with V content increasing. The dielectric constant of the films is in the range of 9-16 at 1 kHz, and the dielectric loss blow 1%. The J-E characteristic of the films suggests that the field-assisted ionic conduction mechanism is predominant at the lower electric field and trap-controlled space-charge-limited conduction mechanism is predominant at the higher electric field.

AB - The V-doped ZnO thin films were prepared on Pt/TiO2/SiO 2/Si substrate by RF magnetron sputtering for piezoelectric device applications. X-ray diffraction study suggests that the sputtered ZnO thin films are grown in (0002)-preferred orientation, and the c lattice parameter decrease with V content increasing. The dielectric constant of the films is in the range of 9-16 at 1 kHz, and the dielectric loss blow 1%. The J-E characteristic of the films suggests that the field-assisted ionic conduction mechanism is predominant at the lower electric field and trap-controlled space-charge-limited conduction mechanism is predominant at the higher electric field.

KW - Piezoelectric

KW - Sputtering

KW - V-doped ZnO films

UR - https://www.scopus.com/pages/publications/79955698022

U2 - 10.1080/00150193.2010.484319

DO - 10.1080/00150193.2010.484319

M3 - 会议文章

AN - SCOPUS:79955698022

SN - 0015-0193

VL - 406

SP - 10

EP - 15

JO - Ferroelectrics

JF - Ferroelectrics

IS - 1

T2 - 12th International Meeting on Ferroelectricity, IMF-12 and the 18th IEEE International Symposium on Applications of Ferroelectrics, ISAF-18

Y2 - 23 August 2009 through 27 August 2009

ER -

V-doped ZnO thin films prepared by RF magnetron sputtering

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Keywords

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