Understanding temperature impact on filament-related HfO2 solid-state incandescent lighting emission devices and performance enhancement using patterned wafer approaches

  • Yiwei Liu
  • , Gang Niu
  • , Can Yang
  • , Shengli Wu
  • , Liyan Dai
  • , Oliver Skibitzki

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

HfO2-based solid-state incandescent light emission devices (SSI-LEDs) with conductive filament-related light emission mechanism are promising candidates for future light emission devices. In this letter, the temperature impact on the electrical and light emission properties of SSI-LEDs has been studied. The increase of the substrate temperature of the device leads to a reduction of the hard breakdown voltage and a decrease of the lighting efficiency. Both behaviors can be attributed to the Si-diffusion-assisted filament mechanism. By understanding such mechanism, we demonstrate a patterned wafer approach, geometrically confining the electrical field to effectively enhance the lighting performance of HfO2 SSI-LED devices. Our results support the explanation of the underlying light mechanism and open an effective pathway to improve the performance of the SSI-LED devices.

Original languageEnglish
Article number8643444
Pages (from-to)582-585
Number of pages4
JournalIEEE Electron Device Letters
Volume40
Issue number4
DOIs
StatePublished - Apr 2019

Keywords

  • HfO
  • patterned wafer
  • substrate temperature

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