Ultraviolet sensor of non-bias type; Layered film structure of photovoltaic ferroelectrics

Masaaki Ichiki; Harumi Furue; Takeshi Kobayashi; Yasushi Morikawa; Kazuhiro Nonaka; Takashi Nakada; Chiaki Endo; Ryutaro Maeda

doi:10.1109/SENSOR.2005.1497519

Ultraviolet sensor of non-bias type; Layered film structure of photovoltaic ferroelectrics

Masaaki Ichiki
, Harumi Furue
, Takeshi Kobayashi
, Yasushi Morikawa
, Kazuhiro Nonaka
, Takashi Nakada
, Chiaki Endo
, Ryutaro Maeda

National Institute of Advanced Industrial Science and Technology
Tokyo Denki University
Takashima Sangyo Co.Ltd

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

This paper reports on the formation of layered film structures and the highly improved photoinduced output current of the lead lanthanum zirconate titanate (PLZT) employed. The photovoltaic effect of ferroelectrics has the advantage of its simple mechanisms of non-bias applications which are indispensable for semiconductor p-n junctions. The new design is described using an upper transparent indium tin oxide (ITO) electrode. The photovoltaic current of the PLZT film was more than 10² times than that of bulk PLZT. The PLZT film also has the advantage of easy output control and suitability for use on Si. Results show that the photovoltaic effect of the ferroelectric layered film is useful as the current source for micro-electro-mechanical systems (MEMS).

Original language	English
Title of host publication	TRANSDUCERS '05 - 13th International Conference on Solid-State Sensors and Actuators and Microsystems - Digest of Technical Papers
Pages	2107-2110
Number of pages	4
DOIs	https://doi.org/10.1109/SENSOR.2005.1497519
State	Published - 2005
Externally published	Yes
Event	13th International Conference on Solid-State Sensors and Actuators and Microsystems, TRANSDUCERS '05 - Seoul, Korea, Republic of Duration: 5 Jun 2005 → 9 Jun 2005

Publication series

Name	Digest of Technical Papers - International Conference on Solid State Sensors and Actuators and Microsystems, TRANSDUCERS '05
Volume	2

Conference

Conference	13th International Conference on Solid-State Sensors and Actuators and Microsystems, TRANSDUCERS '05
Country/Territory	Korea, Republic of
City	Seoul
Period	5/06/05 → 9/06/05

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Layered film
Lead lanthanum zirconate titanate (PLZT)
Photovoltaic effect
Ultraciolet sensor

Access to Document

10.1109/SENSOR.2005.1497519

Cite this

Ichiki, M., Furue, H., Kobayashi, T., Morikawa, Y., Nonaka, K., Nakada, T., Endo, C., & Maeda, R. (2005). Ultraviolet sensor of non-bias type; Layered film structure of photovoltaic ferroelectrics. In TRANSDUCERS '05 - 13th International Conference on Solid-State Sensors and Actuators and Microsystems - Digest of Technical Papers (pp. 2107-2110). Article 4A3.3 (Digest of Technical Papers - International Conference on Solid State Sensors and Actuators and Microsystems, TRANSDUCERS '05; Vol. 2). https://doi.org/10.1109/SENSOR.2005.1497519

Ichiki, Masaaki ; Furue, Harumi ; Kobayashi, Takeshi et al. / Ultraviolet sensor of non-bias type; Layered film structure of photovoltaic ferroelectrics. TRANSDUCERS '05 - 13th International Conference on Solid-State Sensors and Actuators and Microsystems - Digest of Technical Papers. 2005. pp. 2107-2110 (Digest of Technical Papers - International Conference on Solid State Sensors and Actuators and Microsystems, TRANSDUCERS '05).

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title = "Ultraviolet sensor of non-bias type; Layered film structure of photovoltaic ferroelectrics",

abstract = "This paper reports on the formation of layered film structures and the highly improved photoinduced output current of the lead lanthanum zirconate titanate (PLZT) employed. The photovoltaic effect of ferroelectrics has the advantage of its simple mechanisms of non-bias applications which are indispensable for semiconductor p-n junctions. The new design is described using an upper transparent indium tin oxide (ITO) electrode. The photovoltaic current of the PLZT film was more than 102 times than that of bulk PLZT. The PLZT film also has the advantage of easy output control and suitability for use on Si. Results show that the photovoltaic effect of the ferroelectric layered film is useful as the current source for micro-electro-mechanical systems (MEMS).",

keywords = "Layered film, Lead lanthanum zirconate titanate (PLZT), Photovoltaic effect, Ultraciolet sensor",

author = "Masaaki Ichiki and Harumi Furue and Takeshi Kobayashi and Yasushi Morikawa and Kazuhiro Nonaka and Takashi Nakada and Chiaki Endo and Ryutaro Maeda",

year = "2005",

doi = "10.1109/SENSOR.2005.1497519",

language = "英语",

isbn = "0780389948",

series = "Digest of Technical Papers - International Conference on Solid State Sensors and Actuators and Microsystems, TRANSDUCERS '05",

pages = "2107--2110",

booktitle = "TRANSDUCERS '05 - 13th International Conference on Solid-State Sensors and Actuators and Microsystems - Digest of Technical Papers",

note = "13th International Conference on Solid-State Sensors and Actuators and Microsystems, TRANSDUCERS '05 ; Conference date: 05-06-2005 Through 09-06-2005",

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Ichiki, M, Furue, H, Kobayashi, T, Morikawa, Y, Nonaka, K, Nakada, T, Endo, C & Maeda, R 2005, Ultraviolet sensor of non-bias type; Layered film structure of photovoltaic ferroelectrics. in TRANSDUCERS '05 - 13th International Conference on Solid-State Sensors and Actuators and Microsystems - Digest of Technical Papers., 4A3.3, Digest of Technical Papers - International Conference on Solid State Sensors and Actuators and Microsystems, TRANSDUCERS '05, vol. 2, pp. 2107-2110, 13th International Conference on Solid-State Sensors and Actuators and Microsystems, TRANSDUCERS '05, Seoul, Korea, Republic of, 5/06/05. https://doi.org/10.1109/SENSOR.2005.1497519

Ultraviolet sensor of non-bias type; Layered film structure of photovoltaic ferroelectrics. / Ichiki, Masaaki; Furue, Harumi; Kobayashi, Takeshi et al.
TRANSDUCERS '05 - 13th International Conference on Solid-State Sensors and Actuators and Microsystems - Digest of Technical Papers. 2005. p. 2107-2110 4A3.3 (Digest of Technical Papers - International Conference on Solid State Sensors and Actuators and Microsystems, TRANSDUCERS '05; Vol. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Ultraviolet sensor of non-bias type; Layered film structure of photovoltaic ferroelectrics

AU - Ichiki, Masaaki

AU - Furue, Harumi

AU - Kobayashi, Takeshi

AU - Morikawa, Yasushi

AU - Nonaka, Kazuhiro

AU - Nakada, Takashi

AU - Endo, Chiaki

AU - Maeda, Ryutaro

PY - 2005

Y1 - 2005

N2 - This paper reports on the formation of layered film structures and the highly improved photoinduced output current of the lead lanthanum zirconate titanate (PLZT) employed. The photovoltaic effect of ferroelectrics has the advantage of its simple mechanisms of non-bias applications which are indispensable for semiconductor p-n junctions. The new design is described using an upper transparent indium tin oxide (ITO) electrode. The photovoltaic current of the PLZT film was more than 102 times than that of bulk PLZT. The PLZT film also has the advantage of easy output control and suitability for use on Si. Results show that the photovoltaic effect of the ferroelectric layered film is useful as the current source for micro-electro-mechanical systems (MEMS).

AB - This paper reports on the formation of layered film structures and the highly improved photoinduced output current of the lead lanthanum zirconate titanate (PLZT) employed. The photovoltaic effect of ferroelectrics has the advantage of its simple mechanisms of non-bias applications which are indispensable for semiconductor p-n junctions. The new design is described using an upper transparent indium tin oxide (ITO) electrode. The photovoltaic current of the PLZT film was more than 102 times than that of bulk PLZT. The PLZT film also has the advantage of easy output control and suitability for use on Si. Results show that the photovoltaic effect of the ferroelectric layered film is useful as the current source for micro-electro-mechanical systems (MEMS).

KW - Layered film

KW - Lead lanthanum zirconate titanate (PLZT)

KW - Photovoltaic effect

KW - Ultraciolet sensor

UR - https://www.scopus.com/pages/publications/27544473397

U2 - 10.1109/SENSOR.2005.1497519

DO - 10.1109/SENSOR.2005.1497519

M3 - 会议稿件

AN - SCOPUS:27544473397

SN - 0780389948

SN - 9780780389946

T3 - Digest of Technical Papers - International Conference on Solid State Sensors and Actuators and Microsystems, TRANSDUCERS '05

SP - 2107

EP - 2110

BT - TRANSDUCERS '05 - 13th International Conference on Solid-State Sensors and Actuators and Microsystems - Digest of Technical Papers

T2 - 13th International Conference on Solid-State Sensors and Actuators and Microsystems, TRANSDUCERS '05

Y2 - 5 June 2005 through 9 June 2005

ER -

Ichiki M, Furue H, Kobayashi T, Morikawa Y, Nonaka K, Nakada T et al. Ultraviolet sensor of non-bias type; Layered film structure of photovoltaic ferroelectrics. In TRANSDUCERS '05 - 13th International Conference on Solid-State Sensors and Actuators and Microsystems - Digest of Technical Papers. 2005. p. 2107-2110. 4A3.3. (Digest of Technical Papers - International Conference on Solid State Sensors and Actuators and Microsystems, TRANSDUCERS '05). doi: 10.1109/SENSOR.2005.1497519

Ultraviolet sensor of non-bias type; Layered film structure of photovoltaic ferroelectrics

Abstract

Publication series

Conference

UN SDGs

Keywords

Access to Document

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