Ultrafast carrier dynamics triggered by Ga-S bond in GaZnON/CdS heterojunction for efficient photocatalytic hydrogen evolution

Constructing heterojunction has been regarded as a valid strategy of photocatalysts to promote the catalytic process. However, beyond the possible synergistic advantage from the component catalysts, the understanding of the interface effect on the photocatalytic process within heterojunction remains challenging. Herein, we prepare a novel GaZnON/CdS heterojunction photocatalyst via a robust electrostatic assembly method. The sulfur atoms in CdS are found to occupy the nitrogen vacancy over the GaZnON surface to form interfacial Ga-S bonds, which is proved as electron-transfer channel between CdS and GaZnON to realize efficient photo-induced carrier separation. The dynamic study quantificationally reveals interfacial electron transfer with a fast transfer rate of 143.8 ns⁻¹. Thereby, the optimal composite photocatalyst reached an impressive hydrogen evolution rate of 14.76 mmol g^-1h⁻¹, as well as an impressive AQY of 36.1 % (450 nm). This work expounds the ultrafast carrier dynamics underlying interface bonds within heterojunction for weakened photo-induced carrier recombination.