Ultra-high strain in epitaxial silicon carbide nanostructures utilizing residual stress amplification

Strain engineering has attracted great attention, particularly for epitaxial films grown on a different substrate. Residual strains of SiC have been widely employed to form ultra-high frequency and high Q factor resonators. However, to date, the highest residual strain of SiC was reported to be limited to approximately 0.6%. Large strains induced into SiC could lead to several interesting physical phenomena, as well as significant improvement of resonant frequencies. We report an unprecedented nanostrain-amplifier structure with an ultra-high residual strain up to 8% utilizing the natural residual stress between epitaxial 3C-SiC and Si. In addition, the applied strain can be tuned by changing the dimensions of the amplifier structure. The possibility of introducing such a controllable and ultra-high strain will open the door to investigating the physics of SiC in large strain regimes and the development of ultra sensitive mechanical sensors.