Turbulent transport of oxygen in the Czochralski growth of large silicon crystals

Rigorous control of oxygen concentration in a large diameter silicon crystal grown by the Czochralski process is a challenge for the crystal growers. In this work, the renormalization group (RNG) method is employed to simulate the turbulent flows in a large melt with high turbulence level. It is found that the oxygen solubility of silica crucible, the evaporation of oxygen from the free surface, and the melt flow structure greatly affect the oxygen transport. Details of the transport mechanisms of oxygen in a large melt are investigated for various process conditions.