Tunneling of carrier at the interface barrier induced nonvolatile resistive switching memory behaviors

Pingping Zheng; Bai Sun; Yong Zhao; Zhou Yu

doi:10.1016/j.mtcomm.2018.06.002

Tunneling of carrier at the interface barrier induced nonvolatile resistive switching memory behaviors

Pingping Zheng
, Bai Sun
, Yong Zhao
, Zhou Yu

Southwest Jiaotong University

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

The mechanism of resistance switching memory effect has always been a focused scientific topic. In this work, a new resistance conversion mechanism is put forward in a resistance switching device with sandwich structure, in which the Cu₂ZnSnSe₄ (CZTSe) is used as active layer and the F-doped SnO₂ (FTO) and Al-doped ZnO (AZO) acts the top and bottom electrode, respectively. Through further in-depth study, an optimal memory effect in the FTO/CZTSe/AZO device is observed when the thickness of CZTSe film is ∼200 nm (d_CZTSe = 200 nm). Finally, the memory characteristics of the resistance switching device is clarified in detail by using a physical model based on the tunneling of carrier at the Schottky barrier which are formed on the FTO/CZTSe and CZTSe/AZO interfaces.

Original language	English
Pages (from-to)	164-168
Number of pages	5
Journal	Materials Today Communications
Volume	16
DOIs	https://doi.org/10.1016/j.mtcomm.2018.06.002
State	Published - Sep 2018
Externally published	Yes

Keywords

CuZnSnSe
Mechanism
Schottky barrier
Thickness
Tunneling of carrier

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10.1016/j.mtcomm.2018.06.002

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title = "Tunneling of carrier at the interface barrier induced nonvolatile resistive switching memory behaviors",

abstract = "The mechanism of resistance switching memory effect has always been a focused scientific topic. In this work, a new resistance conversion mechanism is put forward in a resistance switching device with sandwich structure, in which the Cu2ZnSnSe4 (CZTSe) is used as active layer and the F-doped SnO2 (FTO) and Al-doped ZnO (AZO) acts the top and bottom electrode, respectively. Through further in-depth study, an optimal memory effect in the FTO/CZTSe/AZO device is observed when the thickness of CZTSe film is ∼200 nm (dCZTSe = 200 nm). Finally, the memory characteristics of the resistance switching device is clarified in detail by using a physical model based on the tunneling of carrier at the Schottky barrier which are formed on the FTO/CZTSe and CZTSe/AZO interfaces.",

keywords = "CuZnSnSe, Mechanism, Schottky barrier, Thickness, Tunneling of carrier",

author = "Pingping Zheng and Bai Sun and Yong Zhao and Zhou Yu",

note = "Publisher Copyright: {\textcopyright} 2018 Elsevier Ltd",

year = "2018",

month = sep,

doi = "10.1016/j.mtcomm.2018.06.002",

language = "英语",

volume = "16",

pages = "164--168",

journal = "Materials Today Communications",

issn = "2352-4928",

publisher = "Elsevier Ltd",

}

TY - JOUR

T1 - Tunneling of carrier at the interface barrier induced nonvolatile resistive switching memory behaviors

AU - Zheng, Pingping

AU - Sun, Bai

AU - Zhao, Yong

AU - Yu, Zhou

PY - 2018/9

Y1 - 2018/9

N2 - The mechanism of resistance switching memory effect has always been a focused scientific topic. In this work, a new resistance conversion mechanism is put forward in a resistance switching device with sandwich structure, in which the Cu2ZnSnSe4 (CZTSe) is used as active layer and the F-doped SnO2 (FTO) and Al-doped ZnO (AZO) acts the top and bottom electrode, respectively. Through further in-depth study, an optimal memory effect in the FTO/CZTSe/AZO device is observed when the thickness of CZTSe film is ∼200 nm (dCZTSe = 200 nm). Finally, the memory characteristics of the resistance switching device is clarified in detail by using a physical model based on the tunneling of carrier at the Schottky barrier which are formed on the FTO/CZTSe and CZTSe/AZO interfaces.

AB - The mechanism of resistance switching memory effect has always been a focused scientific topic. In this work, a new resistance conversion mechanism is put forward in a resistance switching device with sandwich structure, in which the Cu2ZnSnSe4 (CZTSe) is used as active layer and the F-doped SnO2 (FTO) and Al-doped ZnO (AZO) acts the top and bottom electrode, respectively. Through further in-depth study, an optimal memory effect in the FTO/CZTSe/AZO device is observed when the thickness of CZTSe film is ∼200 nm (dCZTSe = 200 nm). Finally, the memory characteristics of the resistance switching device is clarified in detail by using a physical model based on the tunneling of carrier at the Schottky barrier which are formed on the FTO/CZTSe and CZTSe/AZO interfaces.

KW - CuZnSnSe

KW - Mechanism

KW - Schottky barrier

KW - Thickness

KW - Tunneling of carrier

UR - https://www.scopus.com/pages/publications/85048594433

U2 - 10.1016/j.mtcomm.2018.06.002

DO - 10.1016/j.mtcomm.2018.06.002

M3 - 文章

AN - SCOPUS:85048594433

SN - 2352-4928

VL - 16

SP - 164

EP - 168

JO - Materials Today Communications

JF - Materials Today Communications

ER -

Tunneling of carrier at the interface barrier induced nonvolatile resistive switching memory behaviors

Abstract

Keywords

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