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Tunable oxygen vacancy configuration by strain engineering in perovskite ferroelectrics from first-principles study

  • Q. Yang
  • , J. X. Cao
  • , Y. C. Zhou
  • , Y. Zhang
  • , Y. Ma
  • , X. J. Lou
  • XiangTan University

Research output: Contribution to journalArticlepeer-review

25 Scopus citations

Abstract

Comprehensive first-principle calculations indicate that the oxygen vacancy (VO) configuration of a prototypical perovskite oxide PbTiO 3 (PTO) can be tuned by strain engineering. Remarkably, we found that VO located along the c axis (Vc), normally resulting in a polarization-harming tail-to-tail domain configuration in strain-free PTO (V c u d), can be readily tuned to a polarization-harmless head-to-tail domain configuration (V c s w) by applying an ab-biaxial compressive strain of 3. Also, VO located in the ab-plane (Vab), another type of polarization-harmless vacancy, can be stabilized by applying a compressive strain of 2.

Original languageEnglish
Article number142911
JournalApplied Physics Letters
Volume103
Issue number14
DOIs
StatePublished - 30 Sep 2013

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