Tunable Electrical Performance of Few-Layered Black Phosphorus by Strain

  • Hongrong Wu
  • , Xiaofei Liu
  • , Jun Yin
  • , Jianxin Zhou
  • , Wanlin Guo

Research output: Contribution to journalArticlepeer-review

23 Scopus citations

Abstract

Researchers demonstrate the strain-tunable electrical performance of few-layered black phosphorus (BP),vertically sandwiched between two metal contacts. The current?voltage (I?V) curves of BP under varying normal loads are measured within a conductive atomic force microscope (AFM). The Schottky barrier between BP and metal electrode decreases with increasing normal force, and vanishes at a critical force, leading to a transition from the nonlinear conduction to the nearly linear conduction.

Original languageEnglish
Pages (from-to)5276-5280
Number of pages5
JournalSmall
DOIs
StatePublished - 2016
Externally publishedYes

Keywords

  • Schottky barrier
  • atomic force microscopy
  • bandgap modulation
  • black phosphorus
  • strain engineering

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