Abstract
Researchers demonstrate the strain-tunable electrical performance of few-layered black phosphorus (BP),vertically sandwiched between two metal contacts. The current?voltage (I?V) curves of BP under varying normal loads are measured within a conductive atomic force microscope (AFM). The Schottky barrier between BP and metal electrode decreases with increasing normal force, and vanishes at a critical force, leading to a transition from the nonlinear conduction to the nearly linear conduction.
| Original language | English |
|---|---|
| Pages (from-to) | 5276-5280 |
| Number of pages | 5 |
| Journal | Small |
| DOIs | |
| State | Published - 2016 |
| Externally published | Yes |
Keywords
- Schottky barrier
- atomic force microscopy
- bandgap modulation
- black phosphorus
- strain engineering
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