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Transparent nanostructured ZnS films by low-temperature sputtering for flexible optoelectronic devices

  • Yuanjie Li
  • , Shoaib Muhammad
  • , Xuan Zhu
  • , Chao Wu
  • Xi'an Jiaotong University

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Wide bandgap compound ZnS is one of the promising materials used in versatile applications including solar cells, UV photodetectors and luminescent devices. Compared to other II-VI sulfides, ZnS has several advantages of non-toxicity, wider solar spectrum transparency and earth-abundance. Recent progress on optimization of synthesis techniques of ZnS allows it to be effectively realized on transparent and flexible substrates. In this work, nanostructured ZnS films were deposited on bare quartz and ITO coated glass substrates using RF sputtering at various conditions. Crystal structural, optical and surface chemical properties of ZnS films have been systematically characterized. It is revealed that ZnS films exhibit cubic β-phase crystalline structures on both substrates. The optical transmittance of ZnS films is above 85% in the visible range. The substrate temperature plays an important role in crystalline quality of ZnS films. Sputtering power exhibits more effects on the thickness and optical properties of ZnS films. Optimization of deposition parameters has been realized by investigation of optical, microstructure and crystallinity of ZnS thin films in this study.

Original languageEnglish
Title of host publicationOptoelectronic Devices and Integration VIII
EditorsXuping Zhang, Baojun Li, Changyuan Yu, Xinliang Zhang, Daoxin Dai
PublisherSPIE
ISBN (Electronic)9781510630857
DOIs
StatePublished - 2019
EventOptoelectronic Devices and Integration VIII 2019 - Hangzhou, China
Duration: 22 Oct 201923 Oct 2019

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume11184
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceOptoelectronic Devices and Integration VIII 2019
Country/TerritoryChina
CityHangzhou
Period22/10/1923/10/19

Keywords

  • Flexible devices
  • Nanostructured ZnS films
  • RF sputtering
  • Solar cell
  • ZnS buffer layer

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