Transfer technology of ferroelectric films onto the polymer substrate for the application of high density capacitor

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

High dielectric capacitors , that has around 1000 in dielectric constant, can be successfully formed by nanotransfer on non-heat-resisting substrates. PZT film could be released from the Si substrate and bonded onto the polymer one. The releasing characteristics have the relationships with the thickness of Pt layer. The formed PZT has perovskite structure and clear columnar texture.

Original languageEnglish
Title of host publicationNEMS/MEMS Technology and Devices - Selected, peer reviewed papers from the International Conference on Materials for Advanced Technologies 2009, ICMAT 2009
Pages311-314
Number of pages4
DOIs
StatePublished - 2009
Externally publishedYes
EventInternational Conference on Materials for Advanced Technologies, ICMAT 2009 - Singpore, Singapore
Duration: 28 Jun 20093 Jul 2009

Publication series

NameAdvanced Materials Research
Volume74
ISSN (Print)1022-6680

Conference

ConferenceInternational Conference on Materials for Advanced Technologies, ICMAT 2009
Country/TerritorySingapore
CitySingpore
Period28/06/093/07/09

Keywords

  • Capacitor
  • Ferroelectrics
  • PZT
  • Transfer method

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