Total Ionizing Dose Responses of β-GaO Thin Film Solar-Blind Ultraviolet Photodetectors

Tao Xiao; Teng Ma; Zhifeng Lei; Weili Fu; Hong Zhang; Chao Peng; Zhangang Zhang; Hongjia Song; Zhao Fu; Daoyou Guo; Xiangli Zhong; Jinbin Wang; Xiaoping Ouyang

doi:10.1109/TED.2025.3534175

Total Ionizing Dose Responses of β-GaO Thin Film Solar-Blind Ultraviolet Photodetectors

Tao Xiao
, Teng Ma
, Zhifeng Lei
, Weili Fu
, Hong Zhang
, Chao Peng
, Zhangang Zhang
, Hongjia Song
, Zhao Fu
, Daoyou Guo
, Xiangli Zhong
, Jinbin Wang
, Xiaoping Ouyang

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

This article investigated the total ionizing dose (TID) effects on the metal-semiconductor-metal (MSM) \beta $-Ga2O3 solar-blind ultraviolet photodetector under bias conditions through photoelectric response tests. The photocurrent and dark current of the device exhibited a notable increase after 2 Mrad(Si) TID irradiation. The TID irradiation caused a slight degradation in a photo-To-dark current ratio (PDCR). Additionally, microscopic characteristic changes and degradation mechanisms due to TID irradiation were evaluated using Raman spectroscopy, atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS). The TID-induced oxygen vacancy defect in the \beta $-Ga2O3 film increased both the photocurrent and dark current of the device. This study demonstrated the outstanding TID radiation tolerance of biased \beta $-Ga2O3 solar-blind ultraviolet photodetectors, highlighting their significant potential for applications in the field of optoelectronics under extreme environmental conditions.

Original language	English
Pages (from-to)	1249-1253
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	72
Issue number	3
DOIs	https://doi.org/10.1109/TED.2025.3534175
State	Published - 2025
Externally published	Yes

Keywords

Bias condition
I-Gaa
optoelectrical characteristics
solar-blind ultraviolet photodetector
total ionizing dose (TID) effect

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10.1109/TED.2025.3534175

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@article{4cf0ea4c5df74f069d7e1104e53dfc84,

title = "Total Ionizing Dose Responses of β-GaO Thin Film Solar-Blind Ultraviolet Photodetectors",

abstract = "This article investigated the total ionizing dose (TID) effects on the metal-semiconductor-metal (MSM) \textbackslash{}beta \$-Ga2O3 solar-blind ultraviolet photodetector under bias conditions through photoelectric response tests. The photocurrent and dark current of the device exhibited a notable increase after 2 Mrad(Si) TID irradiation. The TID irradiation caused a slight degradation in a photo-To-dark current ratio (PDCR). Additionally, microscopic characteristic changes and degradation mechanisms due to TID irradiation were evaluated using Raman spectroscopy, atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS). The TID-induced oxygen vacancy defect in the \textbackslash{}beta \$-Ga2O3 film increased both the photocurrent and dark current of the device. This study demonstrated the outstanding TID radiation tolerance of biased \textbackslash{}beta \$-Ga2O3 solar-blind ultraviolet photodetectors, highlighting their significant potential for applications in the field of optoelectronics under extreme environmental conditions.",

keywords = "Bias condition, I-Gaa, optoelectrical characteristics, solar-blind ultraviolet photodetector, total ionizing dose (TID) effect",

author = "Tao Xiao and Teng Ma and Zhifeng Lei and Weili Fu and Hong Zhang and Chao Peng and Zhangang Zhang and Hongjia Song and Zhao Fu and Daoyou Guo and Xiangli Zhong and Jinbin Wang and Xiaoping Ouyang",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2025",

doi = "10.1109/TED.2025.3534175",

language = "英语",

volume = "72",

pages = "1249--1253",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

}

TY - JOUR

T1 - Total Ionizing Dose Responses of β-GaO Thin Film Solar-Blind Ultraviolet Photodetectors

AU - Xiao, Tao

AU - Ma, Teng

AU - Lei, Zhifeng

AU - Fu, Weili

AU - Zhang, Hong

AU - Peng, Chao

AU - Zhang, Zhangang

AU - Song, Hongjia

AU - Fu, Zhao

AU - Guo, Daoyou

AU - Zhong, Xiangli

AU - Wang, Jinbin

AU - Ouyang, Xiaoping

PY - 2025

Y1 - 2025

N2 - This article investigated the total ionizing dose (TID) effects on the metal-semiconductor-metal (MSM) \beta $-Ga2O3 solar-blind ultraviolet photodetector under bias conditions through photoelectric response tests. The photocurrent and dark current of the device exhibited a notable increase after 2 Mrad(Si) TID irradiation. The TID irradiation caused a slight degradation in a photo-To-dark current ratio (PDCR). Additionally, microscopic characteristic changes and degradation mechanisms due to TID irradiation were evaluated using Raman spectroscopy, atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS). The TID-induced oxygen vacancy defect in the \beta $-Ga2O3 film increased both the photocurrent and dark current of the device. This study demonstrated the outstanding TID radiation tolerance of biased \beta $-Ga2O3 solar-blind ultraviolet photodetectors, highlighting their significant potential for applications in the field of optoelectronics under extreme environmental conditions.

AB - This article investigated the total ionizing dose (TID) effects on the metal-semiconductor-metal (MSM) \beta $-Ga2O3 solar-blind ultraviolet photodetector under bias conditions through photoelectric response tests. The photocurrent and dark current of the device exhibited a notable increase after 2 Mrad(Si) TID irradiation. The TID irradiation caused a slight degradation in a photo-To-dark current ratio (PDCR). Additionally, microscopic characteristic changes and degradation mechanisms due to TID irradiation were evaluated using Raman spectroscopy, atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS). The TID-induced oxygen vacancy defect in the \beta $-Ga2O3 film increased both the photocurrent and dark current of the device. This study demonstrated the outstanding TID radiation tolerance of biased \beta $-Ga2O3 solar-blind ultraviolet photodetectors, highlighting their significant potential for applications in the field of optoelectronics under extreme environmental conditions.

KW - Bias condition

KW - I-Gaa

KW - optoelectrical characteristics

KW - solar-blind ultraviolet photodetector

KW - total ionizing dose (TID) effect

UR - https://www.scopus.com/pages/publications/86000433148

U2 - 10.1109/TED.2025.3534175

DO - 10.1109/TED.2025.3534175

M3 - 文章

AN - SCOPUS:86000433148

SN - 0018-9383

VL - 72

SP - 1249

EP - 1253

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 3

ER -

Total Ionizing Dose Responses of β-GaO Thin Film Solar-Blind Ultraviolet Photodetectors

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Keywords

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