TY - JOUR
T1 - Top gate overlaid carbon nanotube transistor electronic synapse arrays for high-performance image recognition
AU - Hou, Zhenfei
AU - Niu, Gang
AU - Wang, Yachuan
AU - Meng, Haoyan
AU - Yang, Jun
AU - Zhang, Bin
AU - Zhao, Yuan
AU - Li, Jie
AU - Wu, Shengli
N1 - Publisher Copyright:
© 2025 The Royal Society of Chemistry.
PY - 2025/5/21
Y1 - 2025/5/21
N2 - Carbon nanotube field-effect transistor (CNTFET) based electronic synapses have great potential for brain-like neuromorphic computing, due to their low power consumption. However, the realization of diverse biological synaptic plasticity in the CNTFET remains a significant challenge due to its small dynamic range, abrupt conductance modulation and limited hardware structure. In this work, we developed a top gate overlaid carbon nanotube field effect transistor (TGO-CNTFET) with a large dynamic range, which successfully mimics synaptic functions, including excitatory and inhibitory synaptic behaviors (EPSC/IPSC), paired-pulse facilitation and depression (PPF/PPD), and spike-timing-dependent plasticity (STDP). We further investigated the synaptic performances of as-fabricated and air-annealed device arrays. Compared with as-fabricated devices, the air-annealed TGO-CNTFET array demonstrated better performance in terms of the dynamic range of STDP and the power consumption, with the latter achieving a power consumption per spike of 1.27 pJ. This improvement is further reflected in the image recognition task on the CIFAR-100 database using ResNet 50, where the air-annealed device achieved an accuracy of 93.2%, whereas the as-fabricated counterpart reached only 90.8%. This work introduces an architectural strategy for developing neuromorphic computing systems that incorporate functional oxides as dielectric layers in TGO-CNTFET-based synapses.
AB - Carbon nanotube field-effect transistor (CNTFET) based electronic synapses have great potential for brain-like neuromorphic computing, due to their low power consumption. However, the realization of diverse biological synaptic plasticity in the CNTFET remains a significant challenge due to its small dynamic range, abrupt conductance modulation and limited hardware structure. In this work, we developed a top gate overlaid carbon nanotube field effect transistor (TGO-CNTFET) with a large dynamic range, which successfully mimics synaptic functions, including excitatory and inhibitory synaptic behaviors (EPSC/IPSC), paired-pulse facilitation and depression (PPF/PPD), and spike-timing-dependent plasticity (STDP). We further investigated the synaptic performances of as-fabricated and air-annealed device arrays. Compared with as-fabricated devices, the air-annealed TGO-CNTFET array demonstrated better performance in terms of the dynamic range of STDP and the power consumption, with the latter achieving a power consumption per spike of 1.27 pJ. This improvement is further reflected in the image recognition task on the CIFAR-100 database using ResNet 50, where the air-annealed device achieved an accuracy of 93.2%, whereas the as-fabricated counterpart reached only 90.8%. This work introduces an architectural strategy for developing neuromorphic computing systems that incorporate functional oxides as dielectric layers in TGO-CNTFET-based synapses.
UR - https://www.scopus.com/pages/publications/105007683734
U2 - 10.1039/d5tc00252d
DO - 10.1039/d5tc00252d
M3 - 文章
AN - SCOPUS:105007683734
SN - 2050-7534
VL - 13
SP - 13490
EP - 13501
JO - Journal of Materials Chemistry C
JF - Journal of Materials Chemistry C
IS - 26
ER -