Abstract
Zinc oxide (ZnO) has been demonstrated to be a superb electron selective contact material in photovoltaic devices for its high electron mobility and various accessible nanostructures. However, issues of severe charge recombination and thermal instability occurring at the perovskites/ZnO interface hinder its application on perovskite solar cells. Herein, we report a strategy of TiO2 passivation onto the surface of ZnO nanorods (NRs) using a wet-chemical method, where a device structure FTO/ZnO NRs/TiO2 passivation layer/CH3NH3PbI3/spiro-OMeTAD/Ag is adopted. Based on the proposed strategy, an overall power conversion efficiency (PCE) of 13.49% is achieved mainly due to the improved open-circuit voltage (Voc) of 1.02 V, shirt-circuit current density (Jsc) of 20.69 mA cm-2, and fill factor (FF) of 0.64, which are much higher than those of bare ZnO NRs-based devices. Interestingly, TiO2 passivated samples show much better long-term device stability than those without passivation, where TiO2 acts as a buffer layer with improved thermal stability owning to reduced chemisorbed hydroxyl groups as indicated by X-ray photoelectron spectroscopy.
| Original language | English |
|---|---|
| Pages (from-to) | 57996-58002 |
| Number of pages | 7 |
| Journal | RSC Advances |
| Volume | 6 |
| Issue number | 63 |
| DOIs | |
| State | Published - 2016 |