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TiN films fabricated by reactive gas pulse sputtering: A hybrid design of multilayered and compositionally graded structures

  • Jijun Yang
  • , Feifei Zhang
  • , Qiang Wan
  • , Chenyang Lu
  • , Mingjing Peng
  • , Jiali Liao
  • , Yuanyou Yang
  • , Lumin Wang
  • , Ning Liu
  • Sichuan University
  • University of Michigan, Ann Arbor
  • China Academy of Engineering Physics

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

Reactive gas pulse (RGP) sputtering approach was used to prepare TiN thin films through periodically changing the N 2 /Ar gas flow ratio. The obtained [Formula presented] film possessed a hybrid architecture containing compositionally graded and multilayered structures, composed of hcp Ti-phase and fcc TiN-phase sublayers. Meanwhile, the RGP-TiN film exhibited a composition-oscillation along the film thickness direction, where the Ti-phase sublayer had a compositional gradient and the TiN-phase retained a constant stoichiometric ratio of Ti:N ≈ 1. The film modulation ratio λ (the thicknesses ratio of the Ti and TiN-phase sublayer) can be effectively tuned by controlling the undulation behavior of the N 2 partial flow rate. Detailed analysis showed that this hybrid structure originated from a periodic transition of the film growth mode during the reactive sputtering process.

Original languageEnglish
Pages (from-to)255-259
Number of pages5
JournalApplied Surface Science
Volume389
DOIs
StatePublished - 15 Dec 2016
Externally publishedYes

Keywords

  • Composition-oscillation
  • Gradient
  • Multilayer
  • RGP
  • Reactive sputtering
  • TiN film

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