Abstract
Reactive gas pulse (RGP) sputtering approach was used to prepare TiN thin films through periodically changing the N 2 /Ar gas flow ratio. The obtained [Formula presented] film possessed a hybrid architecture containing compositionally graded and multilayered structures, composed of hcp Ti-phase and fcc TiN-phase sublayers. Meanwhile, the RGP-TiN film exhibited a composition-oscillation along the film thickness direction, where the Ti-phase sublayer had a compositional gradient and the TiN-phase retained a constant stoichiometric ratio of Ti:N ≈ 1. The film modulation ratio λ (the thicknesses ratio of the Ti and TiN-phase sublayer) can be effectively tuned by controlling the undulation behavior of the N 2 partial flow rate. Detailed analysis showed that this hybrid structure originated from a periodic transition of the film growth mode during the reactive sputtering process.
| Original language | English |
|---|---|
| Pages (from-to) | 255-259 |
| Number of pages | 5 |
| Journal | Applied Surface Science |
| Volume | 389 |
| DOIs | |
| State | Published - 15 Dec 2016 |
| Externally published | Yes |
Keywords
- Composition-oscillation
- Gradient
- Multilayer
- RGP
- Reactive sputtering
- TiN film
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