Threshold voltage model of total ionizing irradiated short-channel FD-SOI MOSFETs with Gaussian doping profile

Huixiang Huang; Sufen Wei; Jinyan Pan; Wenbin Xu; Chi Cheng Chen; Qiang Mei; Jinhai Chen; Li Geng; Zhengxuan Zhang; Yong Du

doi:10.1109/TNS.2018.2864977

Threshold voltage model of total ionizing irradiated short-channel FD-SOI MOSFETs with Gaussian doping profile

Huixiang Huang
, Sufen Wei
, Jinyan Pan
, Wenbin Xu
, Chi Cheng Chen
, Qiang Mei
, Jinhai Chen
, Li Geng
, Zhengxuan Zhang
, Yong Du

Faculty of Electronic and Information Engineering

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

This paper investigates the effect of total dose radiation on the electrostatic potential distribution and the related short-channel effects (SCEs) of silicon-on-insulator (SOI) metal-oxide-semiconductor (MOS) devices with a vertical Gaussian doping profile. A new approximation of the 2-D potential function perpendicular to the channel for fully depleted SOI MOS field-effect transistors (FETs) is applied in the analytical threshold voltage model derivation. The impact of interface traps and oxide-trapped charge on the electrostatic potential profile, scaling, and SCEs are verified with TCAD simulations. The model agrees well with the experimental extractions of SCE in n-channel MOSFETs.

Original language	English
Article number	8434231
Pages (from-to)	2679-2690
Number of pages	12
Journal	IEEE Transactions on Nuclear Science
Volume	65
Issue number	10
DOIs	https://doi.org/10.1109/TNS.2018.2864977
State	Published - Oct 2018

Keywords

Fully depleted (FD) silicon-on-insulator (SOI)
Gaussian
interface trap
short-channel effect (SCE)
threshold voltage model
total dose radiation

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10.1109/TNS.2018.2864977

Cite this

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title = "Threshold voltage model of total ionizing irradiated short-channel FD-SOI MOSFETs with Gaussian doping profile",

abstract = "This paper investigates the effect of total dose radiation on the electrostatic potential distribution and the related short-channel effects (SCEs) of silicon-on-insulator (SOI) metal-oxide-semiconductor (MOS) devices with a vertical Gaussian doping profile. A new approximation of the 2-D potential function perpendicular to the channel for fully depleted SOI MOS field-effect transistors (FETs) is applied in the analytical threshold voltage model derivation. The impact of interface traps and oxide-trapped charge on the electrostatic potential profile, scaling, and SCEs are verified with TCAD simulations. The model agrees well with the experimental extractions of SCE in n-channel MOSFETs.",

keywords = "Fully depleted (FD) silicon-on-insulator (SOI), Gaussian, interface trap, short-channel effect (SCE), threshold voltage model, total dose radiation",

author = "Huixiang Huang and Sufen Wei and Jinyan Pan and Wenbin Xu and Chen, \{Chi Cheng\} and Qiang Mei and Jinhai Chen and Li Geng and Zhengxuan Zhang and Yong Du",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2018",

month = oct,

doi = "10.1109/TNS.2018.2864977",

language = "英语",

volume = "65",

pages = "2679--2690",

journal = "IEEE Transactions on Nuclear Science",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Threshold voltage model of total ionizing irradiated short-channel FD-SOI MOSFETs with Gaussian doping profile

AU - Huang, Huixiang

AU - Wei, Sufen

AU - Pan, Jinyan

AU - Xu, Wenbin

AU - Chen, Chi Cheng

AU - Mei, Qiang

AU - Chen, Jinhai

AU - Geng, Li

AU - Zhang, Zhengxuan

AU - Du, Yong

PY - 2018/10

Y1 - 2018/10

N2 - This paper investigates the effect of total dose radiation on the electrostatic potential distribution and the related short-channel effects (SCEs) of silicon-on-insulator (SOI) metal-oxide-semiconductor (MOS) devices with a vertical Gaussian doping profile. A new approximation of the 2-D potential function perpendicular to the channel for fully depleted SOI MOS field-effect transistors (FETs) is applied in the analytical threshold voltage model derivation. The impact of interface traps and oxide-trapped charge on the electrostatic potential profile, scaling, and SCEs are verified with TCAD simulations. The model agrees well with the experimental extractions of SCE in n-channel MOSFETs.

AB - This paper investigates the effect of total dose radiation on the electrostatic potential distribution and the related short-channel effects (SCEs) of silicon-on-insulator (SOI) metal-oxide-semiconductor (MOS) devices with a vertical Gaussian doping profile. A new approximation of the 2-D potential function perpendicular to the channel for fully depleted SOI MOS field-effect transistors (FETs) is applied in the analytical threshold voltage model derivation. The impact of interface traps and oxide-trapped charge on the electrostatic potential profile, scaling, and SCEs are verified with TCAD simulations. The model agrees well with the experimental extractions of SCE in n-channel MOSFETs.

KW - Fully depleted (FD) silicon-on-insulator (SOI)

KW - Gaussian

KW - interface trap

KW - short-channel effect (SCE)

KW - threshold voltage model

KW - total dose radiation

UR - https://www.scopus.com/pages/publications/85051675405

U2 - 10.1109/TNS.2018.2864977

DO - 10.1109/TNS.2018.2864977

M3 - 文章

AN - SCOPUS:85051675405

SN - 0018-9499

VL - 65

SP - 2679

EP - 2690

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

IS - 10

M1 - 8434231

ER -

Threshold voltage model of total ionizing irradiated short-channel FD-SOI MOSFETs with Gaussian doping profile

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Keywords

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