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Three-photon photoemission from GaAs-O-Cs negative electron affinity surfaces induced by 2.06 μm nanosecond laser pulses <AUTHGRP>

  • Liming Wang
  • , Zhao Cheng
  • , Qi Ping
  • , Xun Hou

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

Three-photon photoemission effect on GaAs-O-Cs negative electron affinity surfaces (NEA) was studied by using a nanosecond pulsed laser at 2.06 μm wavelength. The photocurrent densities from the photocathodes with different sensitivities were measured as a function of laser intensity at both room and liquid nitrogen temperatures (77 K). The dependence of photocurrent density on the light intensity shows a typical slope of three in logarithmic plot. The results are interpreted in terms of multiphoton photoemission (MPPE) effect. The influence of thermal electron emission to MPPE are discussed.

Original languageEnglish
Pages (from-to)91
Number of pages1
JournalApplied Physics Letters
Volume67
DOIs
StatePublished - 1994
Externally publishedYes

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