Abstract
Three-photon photoemission effect on GaAs-O-Cs negative electron affinity surfaces (NEA) was studied by using a nanosecond pulsed laser at 2.06 μm wavelength. The photocurrent densities from the photocathodes with different sensitivities were measured as a function of laser intensity at both room and liquid nitrogen temperatures (77 K). The dependence of photocurrent density on the light intensity shows a typical slope of three in logarithmic plot. The results are interpreted in terms of multiphoton photoemission (MPPE) effect. The influence of thermal electron emission to MPPE are discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 91 |
| Number of pages | 1 |
| Journal | Applied Physics Letters |
| Volume | 67 |
| DOIs | |
| State | Published - 1994 |
| Externally published | Yes |
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