TY - GEN
T1 - Three-Dimensional Integrated GaN-based DC-DC Converter with an Inductor Substrate
AU - Qi, Zhiyuan
AU - Zhao, Cheng
AU - Wang, Laili
AU - Yang, Fengtao
AU - Pei, Yunqing
AU - Zheng, Zijie
N1 - Publisher Copyright:
© 2019 IEEE.
PY - 2019/9
Y1 - 2019/9
N2 - Generally, the improvement of power density is achieved by increasing switching frequency and using three dimensional (3D) integration technology. The emergence of gallium nitride (GaN) devices can increase switching frequency dramatically and facilitate the realization of 3D integration. By using the 3D integration technology, the structure of power converter can be reconfigured to realize a high space filling rate, and thus to improve the power density. However, the space reconfiguration also changes the magnetic flux distribution and has an impact on the thermal performance of power converter. This paper takes one of the 3D integrated structures as the example for demonstration, which uses a planar inductor as the substrate for the rest parts of power converter. By using finite element analysis (FEA) tool, in-depth study on parasitic inductance and thermal performance of 3D integrated GaN-based power converter was conducted, and experimental prototype was built for verification.
AB - Generally, the improvement of power density is achieved by increasing switching frequency and using three dimensional (3D) integration technology. The emergence of gallium nitride (GaN) devices can increase switching frequency dramatically and facilitate the realization of 3D integration. By using the 3D integration technology, the structure of power converter can be reconfigured to realize a high space filling rate, and thus to improve the power density. However, the space reconfiguration also changes the magnetic flux distribution and has an impact on the thermal performance of power converter. This paper takes one of the 3D integrated structures as the example for demonstration, which uses a planar inductor as the substrate for the rest parts of power converter. By using finite element analysis (FEA) tool, in-depth study on parasitic inductance and thermal performance of 3D integrated GaN-based power converter was conducted, and experimental prototype was built for verification.
KW - 3D Integration
KW - FEA Simulation
KW - GaN HEMTs
KW - Power Density
KW - Space Reconfiguration
UR - https://www.scopus.com/pages/publications/85076790102
U2 - 10.1109/ECCE.2019.8912732
DO - 10.1109/ECCE.2019.8912732
M3 - 会议稿件
AN - SCOPUS:85076790102
T3 - 2019 IEEE Energy Conversion Congress and Exposition, ECCE 2019
SP - 832
EP - 838
BT - 2019 IEEE Energy Conversion Congress and Exposition, ECCE 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 11th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2019
Y2 - 29 September 2019 through 3 October 2019
ER -