TY - GEN
T1 - THERMO-SOLUTAL ISSUES IN VERY LARGE DIAMETER SILICON CRYSTAL GROWTH
AU - Zhang, T.
AU - Wang, G. X.
AU - Ladeinde, F.
AU - Prasad, V.
N1 - Publisher Copyright:
© 1998 American Society of Mechanical Engineers (ASME). All rights reserved.
PY - 1998
Y1 - 1998
N2 - Although 200 mm diameter wafers presently dominate the semiconductor market, 300 mm wafers are expected to be commonly used at the turn of the century. Larger wafer diameter is needed in order to increase the chip yield due to increase in chip size due to higher integration and performance of both memory (DRAM) and microprocessor (MPU) devices, mm diameter single crystals. As the crystal diameter is increased from 200 mm to 300 mm or larger, the size of the melt increases significantly leading to much more complex melt dynamics. Turbulent melt flow phenomena make the predictions and control of growth conditions very difficult. Understanding of the heat and mass transport in large melt systems is therefore critical to the growth and control of high-quality, large-diameter silicon single crystals. This paper examines various thermal-solutal issues related to Czochralski growth of 300 mm silicon crystals such as turbulence in the melt, heat transfer, oxygen transport and control, and the recent progress is reviewed.
AB - Although 200 mm diameter wafers presently dominate the semiconductor market, 300 mm wafers are expected to be commonly used at the turn of the century. Larger wafer diameter is needed in order to increase the chip yield due to increase in chip size due to higher integration and performance of both memory (DRAM) and microprocessor (MPU) devices, mm diameter single crystals. As the crystal diameter is increased from 200 mm to 300 mm or larger, the size of the melt increases significantly leading to much more complex melt dynamics. Turbulent melt flow phenomena make the predictions and control of growth conditions very difficult. Understanding of the heat and mass transport in large melt systems is therefore critical to the growth and control of high-quality, large-diameter silicon single crystals. This paper examines various thermal-solutal issues related to Czochralski growth of 300 mm silicon crystals such as turbulence in the melt, heat transfer, oxygen transport and control, and the recent progress is reviewed.
UR - https://www.scopus.com/pages/publications/85124370949
U2 - 10.1115/IMECE1998-1094
DO - 10.1115/IMECE1998-1094
M3 - 会议稿件
AN - SCOPUS:85124370949
T3 - ASME International Mechanical Engineering Congress and Exposition, Proceedings (IMECE)
SP - 797
EP - 806
BT - Manufacturing Science and Engineering
PB - American Society of Mechanical Engineers (ASME)
T2 - ASME 1998 International Mechanical Engineering Congress and Exposition, IMECE 1998
Y2 - 15 November 1998 through 20 November 1998
ER -