Theoretical study on InxGa1-xN/GaN quantum dots solar cell

Qingwen Deng; Xiaoliang Wang; Cuibai Yang; Hongling Xiao; Cuimei Wang; Haibo Yin; Qifeng Hou; Jinmin Li; Zhanguo Wang; Xun Hou

doi:10.1016/j.physb.2010.10.020

Theoretical study on In_xGa_1-xN/GaN quantum dots solar cell

Qingwen Deng
, Xiaoliang Wang
, Cuibai Yang
, Hongling Xiao
, Cuimei Wang
, Haibo Yin
, Qifeng Hou
, Jinmin Li
, Zhanguo Wang
, Xun Hou

Research output: Contribution to journal › Article › peer-review

46 Scopus citations

Abstract

In this work, the structure of In_xGa_1-xN/GaN quantum dots solar cell is investigated by solving the Schrdinger equation in light of the KronigPenney model. Compared to pn homojunction and heterojunction solar cells, the In_xGa_1-xN/GaN quantum dots intermediate band solar cell manifests much larger power conversion efficiency. Furthermore, the power conversion efficiency of quantum dot intermediate band solar cell strongly depends on the size, interdot distance and gallium content of the quantum dot arrays. Particularly, power conversion efficiency is preferable with the location of intermediate band in the middle of the potential well.

Original language	English
Pages (from-to)	73-76
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	406
Issue number	1
DOIs	https://doi.org/10.1016/j.physb.2010.10.020
State	Published - 11 Jan 2011
Externally published	Yes

Keywords

Efficiency
GaN
Quantum dot

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10.1016/j.physb.2010.10.020

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title = "Theoretical study on InxGa1-xN/GaN quantum dots solar cell",

abstract = "In this work, the structure of InxGa1-xN/GaN quantum dots solar cell is investigated by solving the Schrdinger equation in light of the KronigPenney model. Compared to pn homojunction and heterojunction solar cells, the InxGa1-xN/GaN quantum dots intermediate band solar cell manifests much larger power conversion efficiency. Furthermore, the power conversion efficiency of quantum dot intermediate band solar cell strongly depends on the size, interdot distance and gallium content of the quantum dot arrays. Particularly, power conversion efficiency is preferable with the location of intermediate band in the middle of the potential well.",

keywords = "Efficiency, GaN, Quantum dot",

author = "Qingwen Deng and Xiaoliang Wang and Cuibai Yang and Hongling Xiao and Cuimei Wang and Haibo Yin and Qifeng Hou and Jinmin Li and Zhanguo Wang and Xun Hou",

year = "2011",

month = jan,

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doi = "10.1016/j.physb.2010.10.020",

language = "英语",

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pages = "73--76",

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TY - JOUR

T1 - Theoretical study on InxGa1-xN/GaN quantum dots solar cell

AU - Deng, Qingwen

AU - Wang, Xiaoliang

AU - Yang, Cuibai

AU - Xiao, Hongling

AU - Wang, Cuimei

AU - Yin, Haibo

AU - Hou, Qifeng

AU - Li, Jinmin

AU - Wang, Zhanguo

AU - Hou, Xun

PY - 2011/1/11

Y1 - 2011/1/11

N2 - In this work, the structure of InxGa1-xN/GaN quantum dots solar cell is investigated by solving the Schrdinger equation in light of the KronigPenney model. Compared to pn homojunction and heterojunction solar cells, the InxGa1-xN/GaN quantum dots intermediate band solar cell manifests much larger power conversion efficiency. Furthermore, the power conversion efficiency of quantum dot intermediate band solar cell strongly depends on the size, interdot distance and gallium content of the quantum dot arrays. Particularly, power conversion efficiency is preferable with the location of intermediate band in the middle of the potential well.

AB - In this work, the structure of InxGa1-xN/GaN quantum dots solar cell is investigated by solving the Schrdinger equation in light of the KronigPenney model. Compared to pn homojunction and heterojunction solar cells, the InxGa1-xN/GaN quantum dots intermediate band solar cell manifests much larger power conversion efficiency. Furthermore, the power conversion efficiency of quantum dot intermediate band solar cell strongly depends on the size, interdot distance and gallium content of the quantum dot arrays. Particularly, power conversion efficiency is preferable with the location of intermediate band in the middle of the potential well.

KW - Efficiency

KW - GaN

KW - Quantum dot

UR - https://www.scopus.com/pages/publications/78349308078

U2 - 10.1016/j.physb.2010.10.020

DO - 10.1016/j.physb.2010.10.020

M3 - 文章

AN - SCOPUS:78349308078

SN - 0921-4526

VL - 406

SP - 73

EP - 76

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 1

ER -

Theoretical study on In_xGa_1-xN/GaN quantum dots solar cell

Abstract

Keywords

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