The valence band offset of an Al0.17Ga0.83N/GaN heterojunction determined by X-ray photoelectron spectroscopy

Xiao Jia Wan; Xiao Liang Wang; Hong Ling Xiao; Cui Mei Wang; Chun Feng; Qing Wen Deng; Shen Qi Qu; Jing Wen Zhang; Xun Hou; Shu Jun Cai; Zhi Hong Feng

doi:10.1088/0256-307X/30/5/057101

The valence band offset of an Al_0.17Ga_0.83N/GaN heterojunction determined by X-ray photoelectron spectroscopy

Xiao Jia Wan
, Xiao Liang Wang
, Hong Ling Xiao
, Cui Mei Wang
, Chun Feng
, Qing Wen Deng
, Shen Qi Qu
, Jing Wen Zhang
, Xun Hou
, Shu Jun Cai
, Zhi Hong Feng

Faculty of Electronic and Information Engineering

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

The valence band offset (VBO) of an Al0.17Ga0.83N/GaN heterojunction is determined to be 0.13 ± 0.07 eV by x-ray photoelectron spectroscopy. From the obtained VBO value, the conduction band offset (CBO) of ∼0.22 eV is obtained. The results indicate that the Al0.17Ga0.83N/GaN heterojunction exhibits a type-I band alignment.

Original language	English
Article number	057101
Journal	Chinese Physics Letters
Volume	30
Issue number	5
DOIs	https://doi.org/10.1088/0256-307X/30/5/057101
State	Published - May 2013

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@article{f81890bf53744c37be52823c2373df4e,

title = "The valence band offset of an Al0.17Ga0.83N/GaN heterojunction determined by X-ray photoelectron spectroscopy",

abstract = "The valence band offset (VBO) of an Al0.17Ga0.83N/GaN heterojunction is determined to be 0.13 ± 0.07 eV by x-ray photoelectron spectroscopy. From the obtained VBO value, the conduction band offset (CBO) of ∼0.22 eV is obtained. The results indicate that the Al0.17Ga0.83N/GaN heterojunction exhibits a type-I band alignment.",

author = "Wan, \{Xiao Jia\} and Wang, \{Xiao Liang\} and Xiao, \{Hong Ling\} and Wang, \{Cui Mei\} and Chun Feng and Deng, \{Qing Wen\} and Qu, \{Shen Qi\} and Zhang, \{Jing Wen\} and Xun Hou and Cai, \{Shu Jun\} and Feng, \{Zhi Hong\}",

year = "2013",

month = may,

doi = "10.1088/0256-307X/30/5/057101",

language = "英语",

volume = "30",

journal = "Chinese Physics Letters",

issn = "0256-307X",

publisher = "IOP Publishing Ltd.",

number = "5",

}

TY - JOUR

T1 - The valence band offset of an Al0.17Ga0.83N/GaN heterojunction determined by X-ray photoelectron spectroscopy

AU - Wan, Xiao Jia

AU - Wang, Xiao Liang

AU - Xiao, Hong Ling

AU - Wang, Cui Mei

AU - Feng, Chun

AU - Deng, Qing Wen

AU - Qu, Shen Qi

AU - Zhang, Jing Wen

AU - Hou, Xun

AU - Cai, Shu Jun

AU - Feng, Zhi Hong

PY - 2013/5

Y1 - 2013/5

N2 - The valence band offset (VBO) of an Al0.17Ga0.83N/GaN heterojunction is determined to be 0.13 ± 0.07 eV by x-ray photoelectron spectroscopy. From the obtained VBO value, the conduction band offset (CBO) of ∼0.22 eV is obtained. The results indicate that the Al0.17Ga0.83N/GaN heterojunction exhibits a type-I band alignment.

AB - The valence band offset (VBO) of an Al0.17Ga0.83N/GaN heterojunction is determined to be 0.13 ± 0.07 eV by x-ray photoelectron spectroscopy. From the obtained VBO value, the conduction band offset (CBO) of ∼0.22 eV is obtained. The results indicate that the Al0.17Ga0.83N/GaN heterojunction exhibits a type-I band alignment.

UR - https://www.scopus.com/pages/publications/84877868162

U2 - 10.1088/0256-307X/30/5/057101

DO - 10.1088/0256-307X/30/5/057101

M3 - 文章

AN - SCOPUS:84877868162

SN - 0256-307X

VL - 30

JO - Chinese Physics Letters

JF - Chinese Physics Letters

IS - 5

M1 - 057101

ER -

The valence band offset of an Al_0.17Ga_0.83N/GaN heterojunction determined by X-ray photoelectron spectroscopy

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