@inproceedings{66c5eb49daeb4fd591a23bed9d3ca45c,
title = "The Study on Thermal Coupling Effect for SiC Power Module Design Guidelines",
abstract = "SiC devices have excellent characteristics compared with silicon devices. But its superiority is not fully utilized in some occasions, where the operating ambient temperature is high, the cooling system is constricted, the high power density and decreased size is needed. In this paper, the thermal coupling effect which is vital to further improving the SiC power module in mentioned occasions is investigated by physical analytical derivation and finite element method (FEM) analysis at first. Several designing guidelines for SiC power module are presented at the view of attenuating thermal coupling effect. According to designing guidelines, a SiC-based, half bridge power module using the novel packaging structure called interleaved double-sided packaging structure is proposed. Due to the low thermal coupling effect and more balanced temperature distribution, this module features excellent thermal performance.",
keywords = "SiC device, Thermal coupling, double-sided cooling, high temperature, power module, thermal performance",
author = "Fengtao Yang and Lixin Jia and Laili Wang and Cheng Zhao and Jianpeng Wang and Tongyu Zhang and Yongmei Gan and Hong Zhang",
note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020 ; Conference date: 23-09-2020 Through 25-09-2020",
year = "2020",
month = sep,
day = "23",
doi = "10.1109/WiPDAAsia49671.2020.9360285",
language = "英语",
series = "2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020",
}