The Reliability of Press-pack IGBT in MMC Based on Electro-Thermo-Mechanical Simulation

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

Press-pack IGBTs are now widely used in HVDC and FACTS since its extraordinary reliability and high power density. A method to estimate the reliability of press-pack IGBT based on FEM is proposed. A circuit model of MMC was simulated by Simplorer in order to obtain the power loss model of press-pack IGBT. The coupled steady-state simulation of thermal, electrical and mechanical model was analyzed by Workbench. Furthermore, the transient junction swing of IGBT was estimated by a power loss with half sine profile. LESIT lifetime prediction model was used to analyze the lifetime and reliability of press-pack IGBT in MMC system. Press-pack IGBT has high reliability in MMC in long time scale since the low junction temperature of it.

Original languageEnglish
Title of host publication2020 17th China International Forum on Solid State Lighting and 2020 International Forum on Wide Bandgap Semiconductors China, SSLChina
Subtitle of host publicationIFWS 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages266-270
Number of pages5
ISBN (Electronic)9780738111889
DOIs
StatePublished - 23 Nov 2020
Event17th China International Forum on Solid State Lighting and 2020 International Forum on Wide Bandgap Semiconductors China, SSLChina: IFWS 2020 - Shenzhen, China
Duration: 23 Nov 202025 Nov 2020

Publication series

Name2020 17th China International Forum on Solid State Lighting and 2020 International Forum on Wide Bandgap Semiconductors China, SSLChina: IFWS 2020

Conference

Conference17th China International Forum on Solid State Lighting and 2020 International Forum on Wide Bandgap Semiconductors China, SSLChina: IFWS 2020
Country/TerritoryChina
CityShenzhen
Period23/11/2025/11/20

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