The properties of BaSn_0.15Ti_0.85O₃ thin film prepared by radio frequency magnetron sputtering from powder target

The properties of BaSn_0.15Ti_0.85O₃ (BST) thin film with the thickness of 300 nm deposited from powder target using radio frequency (RF) magnetron sputtering technique is demonstrated. The deposition rate of BST film is estimated to be 40 nm/min, which is fast for ferroelectric materials. The dielectric constant of the film decreases from 10 kHz to 1MHz with the increasing frequency, but the dielectric loss remains small (<0.02) during frequency variety. The dielectric tunability high, which is up to 59.3%, is achieved at a low voltage of 5 V. The results demonstrate that the RF magnetron sputtering from powder target is a versatile, novel technique for the deposition of high-quality ferroelectric thin films.