The method of pulsed x-ray detection with a diode laser

Jun Liu; Xiaoping Ouyang; Zhongbing Zhang; Liang Sheng; Liang Chen; Xinjian Tan; Xiufeng Weng

doi:10.1063/1.4968805

The method of pulsed x-ray detection with a diode laser

Jun Liu
, Xiaoping Ouyang
, Zhongbing Zhang
, Liang Sheng
, Liang Chen
, Xinjian Tan
, Xiufeng Weng

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

A new class of pulsed X-ray detection methods by sensing carrier changes in a diode laser cavity has been presented and demonstrated. The proof-of-principle experiments on detecting pulsed X-ray temporal profile have been done through the diode laser with a multiple quantum well active layer. The result shows that our method can achieve the aim of detecting the temporal profile of a pulsed X-ray source. We predict that there is a minimum value for the pre-bias current of the diode laser by analyzing the carrier rate equation, which exists near the threshold current of the diode laser chip in experiments. This behaviour generally agrees with the characterizations of theoretical analysis. The relative sensitivity is estimated at about 3.3 × 10⁻¹⁷ C ⋅ cm². We have analyzed the time scale of about 10 ps response with both rate equation and Monte Carlo methods.

Original language	English
Article number	123301
Journal	Review of Scientific Instruments
Volume	87
Issue number	12
DOIs	https://doi.org/10.1063/1.4968805
State	Published - 1 Dec 2016
Externally published	Yes

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10.1063/1.4968805

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title = "The method of pulsed x-ray detection with a diode laser",

abstract = "A new class of pulsed X-ray detection methods by sensing carrier changes in a diode laser cavity has been presented and demonstrated. The proof-of-principle experiments on detecting pulsed X-ray temporal profile have been done through the diode laser with a multiple quantum well active layer. The result shows that our method can achieve the aim of detecting the temporal profile of a pulsed X-ray source. We predict that there is a minimum value for the pre-bias current of the diode laser by analyzing the carrier rate equation, which exists near the threshold current of the diode laser chip in experiments. This behaviour generally agrees with the characterizations of theoretical analysis. The relative sensitivity is estimated at about 3.3 × 10−17 C ⋅ cm2. We have analyzed the time scale of about 10 ps response with both rate equation and Monte Carlo methods.",

author = "Jun Liu and Xiaoping Ouyang and Zhongbing Zhang and Liang Sheng and Liang Chen and Xinjian Tan and Xiufeng Weng",

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doi = "10.1063/1.4968805",

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T1 - The method of pulsed x-ray detection with a diode laser

AU - Liu, Jun

AU - Ouyang, Xiaoping

AU - Zhang, Zhongbing

AU - Sheng, Liang

AU - Chen, Liang

AU - Tan, Xinjian

AU - Weng, Xiufeng

PY - 2016/12/1

Y1 - 2016/12/1

N2 - A new class of pulsed X-ray detection methods by sensing carrier changes in a diode laser cavity has been presented and demonstrated. The proof-of-principle experiments on detecting pulsed X-ray temporal profile have been done through the diode laser with a multiple quantum well active layer. The result shows that our method can achieve the aim of detecting the temporal profile of a pulsed X-ray source. We predict that there is a minimum value for the pre-bias current of the diode laser by analyzing the carrier rate equation, which exists near the threshold current of the diode laser chip in experiments. This behaviour generally agrees with the characterizations of theoretical analysis. The relative sensitivity is estimated at about 3.3 × 10−17 C ⋅ cm2. We have analyzed the time scale of about 10 ps response with both rate equation and Monte Carlo methods.

AB - A new class of pulsed X-ray detection methods by sensing carrier changes in a diode laser cavity has been presented and demonstrated. The proof-of-principle experiments on detecting pulsed X-ray temporal profile have been done through the diode laser with a multiple quantum well active layer. The result shows that our method can achieve the aim of detecting the temporal profile of a pulsed X-ray source. We predict that there is a minimum value for the pre-bias current of the diode laser by analyzing the carrier rate equation, which exists near the threshold current of the diode laser chip in experiments. This behaviour generally agrees with the characterizations of theoretical analysis. The relative sensitivity is estimated at about 3.3 × 10−17 C ⋅ cm2. We have analyzed the time scale of about 10 ps response with both rate equation and Monte Carlo methods.

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U2 - 10.1063/1.4968805

DO - 10.1063/1.4968805

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SN - 0034-6748

VL - 87

JO - Review of Scientific Instruments

JF - Review of Scientific Instruments

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ER -

The method of pulsed x-ray detection with a diode laser

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