The growth and fabrication of InGaN/GaN multi-quantum well solar cells on Si(111) substrates

Zhi Dong Li; Hong Ling Xiao; Xiao Liang Wang; Cui Mei Wang; Qing Wen Deng; Liang Jing; Jie Qin Ding; Zhan Guo Wang; Xun Hou

doi:10.1088/0256-307X/30/6/068402

The growth and fabrication of InGaN/GaN multi-quantum well solar cells on Si(111) substrates

Zhi Dong Li
, Hong Ling Xiao
, Xiao Liang Wang
, Cui Mei Wang
, Qing Wen Deng
, Liang Jing
, Jie Qin Ding
, Zhan Guo Wang
, Xun Hou

Faculty of Electronic and Information Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Metalorganic chemical vapor deposition of a crack-free mirror-like surface of InGaN/GaN MQWs on Si (111) substrate is demonstrated, and an InGaN/GaN MQWs solar cell device is fabricated. Photo response measurement of the solar cell devices shows that the fill factor FF = 49.4%, open circuit voltage V _oc = 0.32 V, and short circuit current J_sc = 0.07 mA/cm², under AM 1.5 G illumination. In order to analyze the influence of material quality on the performance of solar cells, XRD, SEM and Raman scattering experiments are carried out. It is found that insertion of a proper top AIN layer can effectively improve the material quality, and therefore enhance the photovoltaic performance of the fabricated device.

Original language	English
Article number	068402
Journal	Chinese Physics Letters
Volume	30
Issue number	6
DOIs	https://doi.org/10.1088/0256-307X/30/6/068402
State	Published - Jun 2013

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@article{19f0e1e4f0634ab29f822203b233a4af,

title = "The growth and fabrication of InGaN/GaN multi-quantum well solar cells on Si(111) substrates",

abstract = "Metalorganic chemical vapor deposition of a crack-free mirror-like surface of InGaN/GaN MQWs on Si (111) substrate is demonstrated, and an InGaN/GaN MQWs solar cell device is fabricated. Photo response measurement of the solar cell devices shows that the fill factor FF = 49.4\%, open circuit voltage V oc = 0.32 V, and short circuit current Jsc = 0.07 mA/cm2, under AM 1.5 G illumination. In order to analyze the influence of material quality on the performance of solar cells, XRD, SEM and Raman scattering experiments are carried out. It is found that insertion of a proper top AIN layer can effectively improve the material quality, and therefore enhance the photovoltaic performance of the fabricated device.",

author = "Li, \{Zhi Dong\} and Xiao, \{Hong Ling\} and Wang, \{Xiao Liang\} and Wang, \{Cui Mei\} and Deng, \{Qing Wen\} and Liang Jing and Ding, \{Jie Qin\} and Wang, \{Zhan Guo\} and Xun Hou",

year = "2013",

month = jun,

doi = "10.1088/0256-307X/30/6/068402",

language = "英语",

volume = "30",

journal = "Chinese Physics Letters",

issn = "0256-307X",

publisher = "IOP Publishing Ltd.",

number = "6",

}

TY - JOUR

T1 - The growth and fabrication of InGaN/GaN multi-quantum well solar cells on Si(111) substrates

AU - Li, Zhi Dong

AU - Xiao, Hong Ling

AU - Wang, Xiao Liang

AU - Wang, Cui Mei

AU - Deng, Qing Wen

AU - Jing, Liang

AU - Ding, Jie Qin

AU - Wang, Zhan Guo

AU - Hou, Xun

PY - 2013/6

Y1 - 2013/6

N2 - Metalorganic chemical vapor deposition of a crack-free mirror-like surface of InGaN/GaN MQWs on Si (111) substrate is demonstrated, and an InGaN/GaN MQWs solar cell device is fabricated. Photo response measurement of the solar cell devices shows that the fill factor FF = 49.4%, open circuit voltage V oc = 0.32 V, and short circuit current Jsc = 0.07 mA/cm2, under AM 1.5 G illumination. In order to analyze the influence of material quality on the performance of solar cells, XRD, SEM and Raman scattering experiments are carried out. It is found that insertion of a proper top AIN layer can effectively improve the material quality, and therefore enhance the photovoltaic performance of the fabricated device.

AB - Metalorganic chemical vapor deposition of a crack-free mirror-like surface of InGaN/GaN MQWs on Si (111) substrate is demonstrated, and an InGaN/GaN MQWs solar cell device is fabricated. Photo response measurement of the solar cell devices shows that the fill factor FF = 49.4%, open circuit voltage V oc = 0.32 V, and short circuit current Jsc = 0.07 mA/cm2, under AM 1.5 G illumination. In order to analyze the influence of material quality on the performance of solar cells, XRD, SEM and Raman scattering experiments are carried out. It is found that insertion of a proper top AIN layer can effectively improve the material quality, and therefore enhance the photovoltaic performance of the fabricated device.

UR - https://www.scopus.com/pages/publications/84879913081

U2 - 10.1088/0256-307X/30/6/068402

DO - 10.1088/0256-307X/30/6/068402

M3 - 文章

AN - SCOPUS:84879913081

SN - 0256-307X

VL - 30

JO - Chinese Physics Letters

JF - Chinese Physics Letters

IS - 6

M1 - 068402

ER -

The growth and fabrication of InGaN/GaN multi-quantum well solar cells on Si(111) substrates

Abstract

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