@inproceedings{bf087bfb72284393b14b0456baed3fe0,
title = "The Effect of Point Defects on DC Degradation of ZnO Varistors",
abstract = "Lowered power loss and asymmetrical reference voltage are reported in the DC degradation of ZnO varistors in this paper. Based on the frequency domain dielectric responses of the pristine and degraded samples, the present study explores the roles of point defects in the degradation process via dielectric relaxations and their activation energies. It is found that the degradation leads to the decrease of the activation energies for the two relaxations under high temperature. Given the lowest migration barrier for Zni (0.57 eV) and high conduction of oxygen ion in Bi-rich phase, it is speculated that Zni and Oad? migrate under DC bias, and then change the defect structure and the double Schottky barrier (DSB) at grain boundaries, during which the reverse-biased barrier height gradually increases, leading to the lowering of power loss.",
keywords = "ZnO varistors, degradation, double Schottky barrier, point defects",
author = "Xia Zhao and Weidong Shi and Boyu Zhang and Men Guo and Yao Wang and Jianying Li",
note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 7th IEEE International Conference on High Voltage Engineering and Application, ICHVE 2020 ; Conference date: 06-09-2020 Through 10-09-2020",
year = "2020",
month = sep,
day = "6",
doi = "10.1109/ICHVE49031.2020.9279532",
language = "英语",
series = "7th IEEE International Conference on High Voltage Engineering and Application, ICHVE 2020 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "7th IEEE International Conference on High Voltage Engineering and Application, ICHVE 2020 - Proceedings",
}