The effect of N2 partial pressure on the properties of Nb-Si-N films by RF reactive magnetron sputtering

Z. X. Song; Y. Wang; C. J.F. Wang; C. L. Liu; K. W. Xu

doi:10.1016/j.surfcoat.2006.07.047

The effect of N₂ partial pressure on the properties of Nb-Si-N films by RF reactive magnetron sputtering

Z. X. Song
, Y. Wang
, C. J.F. Wang
, C. L. Liu
, K. W. Xu

School of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

Nb-Si-N films were sputtered by RF reactive magnetron sputtering with various N₂ partial pressure in argon and nitrogen gas mixture. The characterizers of Nb-Si-N films were performed with energy dispersive spectroscopy, four-point probe method, X-ray diffraction, X-ray photoelectron spectroscopy, atomic force microscope, and transmission electron microscope, respectively. The results reveal that the Nb/Si ratio of Nb-Si-N films decreases as N₂ partial pressure increases. The microstructure of Nb-Si-N films is of a nano-composite that consists of amorphous SiN_x phase and nano-sized NbN crystallites embedding in amorphous SiN_x matrix. When sputtered with high N₂ partial pressure there is more amorphous SiN_x phase in Nb-Si-N films and the grain size of NbN decreases. High N₂ partial pressure is in favor of the growth of hcp ε-NbN phase in the Nb-Si-N films. The value of surface roughness of Nb-Si-N films decreases as N₂ partial pressure increases.

Original language	English
Pages (from-to)	5412-5415
Number of pages	4
Journal	Surface and Coatings Technology
Volume	201
Issue number	9-11 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.surfcoat.2006.07.047
State	Published - 26 Feb 2007

Keywords

Magnetron sputtering
N partial pressure
Nb-Si-N film

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10.1016/j.surfcoat.2006.07.047

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@article{bccc66aeeea24b0db330338b50fbbf4c,

title = "The effect of N2 partial pressure on the properties of Nb-Si-N films by RF reactive magnetron sputtering",

abstract = "Nb-Si-N films were sputtered by RF reactive magnetron sputtering with various N2 partial pressure in argon and nitrogen gas mixture. The characterizers of Nb-Si-N films were performed with energy dispersive spectroscopy, four-point probe method, X-ray diffraction, X-ray photoelectron spectroscopy, atomic force microscope, and transmission electron microscope, respectively. The results reveal that the Nb/Si ratio of Nb-Si-N films decreases as N2 partial pressure increases. The microstructure of Nb-Si-N films is of a nano-composite that consists of amorphous SiNx phase and nano-sized NbN crystallites embedding in amorphous SiNx matrix. When sputtered with high N2 partial pressure there is more amorphous SiNx phase in Nb-Si-N films and the grain size of NbN decreases. High N2 partial pressure is in favor of the growth of hcp ε-NbN phase in the Nb-Si-N films. The value of surface roughness of Nb-Si-N films decreases as N2 partial pressure increases.",

keywords = "Magnetron sputtering, N partial pressure, Nb-Si-N film",

author = "Song, \{Z. X.\} and Y. Wang and Wang, \{C. J.F.\} and Liu, \{C. L.\} and Xu, \{K. W.\}",

year = "2007",

month = feb,

day = "26",

doi = "10.1016/j.surfcoat.2006.07.047",

language = "英语",

volume = "201",

pages = "5412--5415",

journal = "Surface and Coatings Technology",

issn = "0257-8972",

publisher = "Elsevier B.V.",

number = "9-11 SPEC. ISS.",

}

TY - JOUR

T1 - The effect of N2 partial pressure on the properties of Nb-Si-N films by RF reactive magnetron sputtering

AU - Song, Z. X.

AU - Wang, Y.

AU - Wang, C. J.F.

AU - Liu, C. L.

AU - Xu, K. W.

PY - 2007/2/26

Y1 - 2007/2/26

N2 - Nb-Si-N films were sputtered by RF reactive magnetron sputtering with various N2 partial pressure in argon and nitrogen gas mixture. The characterizers of Nb-Si-N films were performed with energy dispersive spectroscopy, four-point probe method, X-ray diffraction, X-ray photoelectron spectroscopy, atomic force microscope, and transmission electron microscope, respectively. The results reveal that the Nb/Si ratio of Nb-Si-N films decreases as N2 partial pressure increases. The microstructure of Nb-Si-N films is of a nano-composite that consists of amorphous SiNx phase and nano-sized NbN crystallites embedding in amorphous SiNx matrix. When sputtered with high N2 partial pressure there is more amorphous SiNx phase in Nb-Si-N films and the grain size of NbN decreases. High N2 partial pressure is in favor of the growth of hcp ε-NbN phase in the Nb-Si-N films. The value of surface roughness of Nb-Si-N films decreases as N2 partial pressure increases.

AB - Nb-Si-N films were sputtered by RF reactive magnetron sputtering with various N2 partial pressure in argon and nitrogen gas mixture. The characterizers of Nb-Si-N films were performed with energy dispersive spectroscopy, four-point probe method, X-ray diffraction, X-ray photoelectron spectroscopy, atomic force microscope, and transmission electron microscope, respectively. The results reveal that the Nb/Si ratio of Nb-Si-N films decreases as N2 partial pressure increases. The microstructure of Nb-Si-N films is of a nano-composite that consists of amorphous SiNx phase and nano-sized NbN crystallites embedding in amorphous SiNx matrix. When sputtered with high N2 partial pressure there is more amorphous SiNx phase in Nb-Si-N films and the grain size of NbN decreases. High N2 partial pressure is in favor of the growth of hcp ε-NbN phase in the Nb-Si-N films. The value of surface roughness of Nb-Si-N films decreases as N2 partial pressure increases.

KW - Magnetron sputtering

KW - N partial pressure

KW - Nb-Si-N film

UR - https://www.scopus.com/pages/publications/33846520417

U2 - 10.1016/j.surfcoat.2006.07.047

DO - 10.1016/j.surfcoat.2006.07.047

M3 - 文章

AN - SCOPUS:33846520417

SN - 0257-8972

VL - 201

SP - 5412

EP - 5415

JO - Surface and Coatings Technology

JF - Surface and Coatings Technology

IS - 9-11 SPEC. ISS.

ER -

The effect of N₂ partial pressure on the properties of Nb-Si-N films by RF reactive magnetron sputtering

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