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Ternary mixed crystal effects on interface optical phonon and electron-phonon coupling in zinc-blende GaN/AlxGa1-xN spherical quantum dots

  • Wen Deng Huang
  • , Guang De Chen
  • , Zhao Lin Yuan
  • , Chuang Hua Yang
  • , Hong Gang Ye
  • , Ye Long Wu
  • Xi'an Jiaotong University
  • Shaanxi University of Technology

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

The theoretical investigations of the interface optical phonons, electron-phonon couplings and its ternary mixed effects in zinc-blende spherical quantum dots are obtained by using the dielectric continuum model and modified random-element isodisplacement model. The features of dispersion curves, electron-phonon coupling strengths, and its ternary mixed effects for interface optical phonons in a single zinc-blende GaN/AlxGa1-xN spherical quantum dot are calculated and discussed in detail. The numerical results show that there are three branches of interface optical phonons. One branch exists in low frequency region; another two branches exist in high frequency region. The interface optical phonons with small quantum number l have more important contributions to the electron-phonon interactions. It is also found that ternary mixed effects have important influences on the interface optical phonon properties in a single zinc-blende GaN/AlxGa1-xN quantum dot. With the increase of Al component, the interface optical phonon frequencies appear linear changes, and the electron-phonon coupling strengths appear non-linear changes in high frequency region. But in low frequency region, the frequencies appear non-linear changes, and the electron-phonon coupling strengths appear linear changes.

Original languageEnglish
Pages (from-to)164-168
Number of pages5
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume76
DOIs
StatePublished - Feb 2016

Keywords

  • Electron-phonon interaction
  • Phonon mode
  • Quantum dot

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