Temperature stable high K microwave dielectric ceramics of Bi3NbO7 doped by V2O5

Li Xia Pang; Wei Guo Liu; Di Zhou

doi:10.1016/j.ceramint.2014.12.024

Temperature stable high K microwave dielectric ceramics of Bi₃NbO₇ doped by V₂O₅

Li Xia Pang
, Wei Guo Liu
, Di Zhou

Faculty of Electronic and Information Engineering

Xi'an Technological University

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Low firing microwave dielectric ceramics Bi₃(Nb_1-xV_x)O₇ (x=0.0, 0.1, 0.2, 0.3, and 0.5) were prepared by the solid state reaction method. Sintering behavior, crystalline structure, microstructure, and microwave dielectric properties were studied. Temperature stable low-firing microwave dielectric ceramics with high permittivity were obtained in the Bi₃(Nb_1-xV_x)O₇ system when x=0.1 and 0.2. The Bi₃(Nb_0.9V_0.1)O₇ and Bi₃(Nb_0.8V_0.2)O₇ ceramics sintered at 870 °C for 2 h were found to possess high permittivity of 80 and 76, Qf (quality factor) values of 615 and 460 GHz, and TCF (temperature coefficient of frequency) values of -22 and+3.3 ppm/°C, respectively.

Original language	English
Pages (from-to)	5182-5185
Number of pages	4
Journal	Ceramics International
Volume	41
Issue number	3
DOIs	https://doi.org/10.1016/j.ceramint.2014.12.024
State	Published - 1 Apr 2015

Keywords

Capacitors
Dielectric properties
Sintering

Access to Document

10.1016/j.ceramint.2014.12.024

Cite this

@article{1af09f87378c4d37aaf8cc0ed0d6d5db,

title = "Temperature stable high K microwave dielectric ceramics of Bi3NbO7 doped by V2O5",

abstract = "Low firing microwave dielectric ceramics Bi3(Nb1-xVx)O7 (x=0.0, 0.1, 0.2, 0.3, and 0.5) were prepared by the solid state reaction method. Sintering behavior, crystalline structure, microstructure, and microwave dielectric properties were studied. Temperature stable low-firing microwave dielectric ceramics with high permittivity were obtained in the Bi3(Nb1-xVx)O7 system when x=0.1 and 0.2. The Bi3(Nb0.9V0.1)O7 and Bi3(Nb0.8V0.2)O7 ceramics sintered at 870 °C for 2 h were found to possess high permittivity of 80 and 76, Qf (quality factor) values of 615 and 460 GHz, and TCF (temperature coefficient of frequency) values of -22 and+3.3 ppm/°C, respectively.",

keywords = "Capacitors, Dielectric properties, Sintering",

author = "Pang, \{Li Xia\} and Liu, \{Wei Guo\} and Di Zhou",

note = "Publisher Copyright: {\textcopyright} 2014 Elsevier Ltd and Techna Group S.r.l.",

year = "2015",

month = apr,

day = "1",

doi = "10.1016/j.ceramint.2014.12.024",

language = "英语",

volume = "41",

pages = "5182--5185",

journal = "Ceramics International",

issn = "0272-8842",

publisher = "Elsevier Ltd",

number = "3",

}

TY - JOUR

T1 - Temperature stable high K microwave dielectric ceramics of Bi3NbO7 doped by V2O5

AU - Pang, Li Xia

AU - Liu, Wei Guo

AU - Zhou, Di

PY - 2015/4/1

Y1 - 2015/4/1

N2 - Low firing microwave dielectric ceramics Bi3(Nb1-xVx)O7 (x=0.0, 0.1, 0.2, 0.3, and 0.5) were prepared by the solid state reaction method. Sintering behavior, crystalline structure, microstructure, and microwave dielectric properties were studied. Temperature stable low-firing microwave dielectric ceramics with high permittivity were obtained in the Bi3(Nb1-xVx)O7 system when x=0.1 and 0.2. The Bi3(Nb0.9V0.1)O7 and Bi3(Nb0.8V0.2)O7 ceramics sintered at 870 °C for 2 h were found to possess high permittivity of 80 and 76, Qf (quality factor) values of 615 and 460 GHz, and TCF (temperature coefficient of frequency) values of -22 and+3.3 ppm/°C, respectively.

AB - Low firing microwave dielectric ceramics Bi3(Nb1-xVx)O7 (x=0.0, 0.1, 0.2, 0.3, and 0.5) were prepared by the solid state reaction method. Sintering behavior, crystalline structure, microstructure, and microwave dielectric properties were studied. Temperature stable low-firing microwave dielectric ceramics with high permittivity were obtained in the Bi3(Nb1-xVx)O7 system when x=0.1 and 0.2. The Bi3(Nb0.9V0.1)O7 and Bi3(Nb0.8V0.2)O7 ceramics sintered at 870 °C for 2 h were found to possess high permittivity of 80 and 76, Qf (quality factor) values of 615 and 460 GHz, and TCF (temperature coefficient of frequency) values of -22 and+3.3 ppm/°C, respectively.

KW - Capacitors

KW - Dielectric properties

KW - Sintering

UR - https://www.scopus.com/pages/publications/84922954383

U2 - 10.1016/j.ceramint.2014.12.024

DO - 10.1016/j.ceramint.2014.12.024

M3 - 文章

AN - SCOPUS:84922954383

SN - 0272-8842

VL - 41

SP - 5182

EP - 5185

JO - Ceramics International

JF - Ceramics International

IS - 3

ER -

Temperature stable high K microwave dielectric ceramics of Bi₃NbO₇ doped by V₂O₅

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this