TY - JOUR
T1 - Temperature Stability of Dielectric Constant and Energy Storage Properties of (Pb1-x,Lax)(Zr0.65,Ti0.35)O3Relaxor Ferroelectric Thin Films
AU - Wu, Ming
AU - Xiao, Yanan
AU - Liu, Yongbing
AU - Li, Huaqiang
AU - Gao, Jinghui
AU - Zhong, Lisheng
AU - Lou, Xiaojie
N1 - Publisher Copyright:
© 1994-2012 IEEE.
PY - 2021/12/1
Y1 - 2021/12/1
N2 - Recently, dielectric energy storage materials and devices attracted much research interest due to its high-power density and the resulted applications. In this work, relaxor ferroelectric (Pb1-x,Lax)(Zr0.65,Ti0.35)O3 (abbreviated as PLZT100X, X = 0.06, 0.08, 0.10 and 0.12) thin films are deposited on Pt/Ti/SiO2/Si substrates by a sol-gel method, and temperature stability of relative dielectric constant as well as energy storage density of the PLZT thin films with different level of La doping are studied. The relative dielectric constant of the PLZT10 thin films is 873 at 1 kHz at 30°C, with maximum of variation of 7.6% in the temperature range from 30-200 °C, which indicates very high temperature stability. The energy storage density of the PLZT thin films is 38.8 J/cm3, 42.2 J/cm3, 33.5 J/cm3 and 36.0 J/cm3 with the La doping of 0.06, 0.08, 0.10 and 0.12, respectively, under the applied electric field of 2840 kV/cm. The energy efficiency of the PLZT thin films is above 70%. In addition, the energy storage density of the PLZT thin films shows good temperature stability, with about 20 J/cm3around the electric field of 1800 kV/cm in the temperature range from 30-150 °C.
AB - Recently, dielectric energy storage materials and devices attracted much research interest due to its high-power density and the resulted applications. In this work, relaxor ferroelectric (Pb1-x,Lax)(Zr0.65,Ti0.35)O3 (abbreviated as PLZT100X, X = 0.06, 0.08, 0.10 and 0.12) thin films are deposited on Pt/Ti/SiO2/Si substrates by a sol-gel method, and temperature stability of relative dielectric constant as well as energy storage density of the PLZT thin films with different level of La doping are studied. The relative dielectric constant of the PLZT10 thin films is 873 at 1 kHz at 30°C, with maximum of variation of 7.6% in the temperature range from 30-200 °C, which indicates very high temperature stability. The energy storage density of the PLZT thin films is 38.8 J/cm3, 42.2 J/cm3, 33.5 J/cm3 and 36.0 J/cm3 with the La doping of 0.06, 0.08, 0.10 and 0.12, respectively, under the applied electric field of 2840 kV/cm. The energy efficiency of the PLZT thin films is above 70%. In addition, the energy storage density of the PLZT thin films shows good temperature stability, with about 20 J/cm3around the electric field of 1800 kV/cm in the temperature range from 30-150 °C.
KW - PLZT
KW - dielectric thin films
KW - energy storage
KW - temperature stability
UR - https://www.scopus.com/pages/publications/85123636092
U2 - 10.1109/TDEI.2021.009818
DO - 10.1109/TDEI.2021.009818
M3 - 文章
AN - SCOPUS:85123636092
SN - 1070-9878
VL - 28
SP - 2052
EP - 2057
JO - IEEE Transactions on Dielectrics and Electrical Insulation
JF - IEEE Transactions on Dielectrics and Electrical Insulation
IS - 6
ER -
