Abstract
Direct X-ray detectors can directly register the energies of X-ray interactions, enabling charge-integrating systems with higher sensitivity and superior spatial and/or energy resolution compared with traditional indirect, scintillator-based X-ray detectors. However, technical challenges in depositing thick films have limited the fabrication of perovskite semiconductors for direct X-ray detection. Here, we report a temperature-engineering strategy for electrostatic-spray (E-spray) coating of CsPbBr₃ to realize direct X-ray detectors. High-quality ∼40-µm-thick CsPbBr₃ films with enhanced surface uniformity and crystallinity are achieved by controlling the substrate temperature during deposition and annealing. The underlying principle-improving thick-film quality via substrate-temperature control-is clarified. The X-ray sensitivity of the CsPbBr₃ detector is as high as 7486.5 µC Gyair⁻¹ cm⁻², and the detection limit is 0.165 µGy s⁻¹. This work provides practical insights into crystallization-control strategies and paves the way for future advancements in CsPbBr₃-based X-ray detector technologies.
| Original language | English |
|---|---|
| Article number | 108436 |
| Journal | Surfaces and Interfaces |
| Volume | 81 |
| DOIs | |
| State | Published - 15 Jan 2026 |
| Externally published | Yes |
Keywords
- Crystallization control
- CsPbBr₃
- Electrostatic spray (E-spray)
- Temperature engineering
- X-ray detector
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