Temperature dependent polarization switching properties of ferroelectric Pb0.92La0.08Zr0.52Ti0.48O δ films grown on nickel foils

Beihai Ma; Zhongqiang Hu; Shanshan Liu; Manoj Narayanan; U. Balachandran

doi:10.1063/1.4793304

Temperature dependent polarization switching properties of ferroelectric Pb_0.92La_0.08Zr_0.52Ti_0.48O _δ films grown on nickel foils

Beihai Ma
, Zhongqiang Hu
, Shanshan Liu
, Manoj Narayanan
, U. Balachandran

Argonne National Laboratory

Research output: Contribution to journal › Article › peer-review

32 Scopus citations

Abstract

Ferroelectric Pb_0.92La_0.08Zr_0.52Ti _0.48O_δ films (≈2-μm thickness) were grown on LaNiO₃-buffered nickel foils by chemical solution deposition. Their ferroelectric and dielectric properties were measured as a function of temperature. With increasing temperature from room temperature to 200 °C, back-switching polarization increased while spontaneous polarization, remanent polarization, and coercive field decreased. The domain wall energy barrier was determined from the temperature-dependent back-switching polarization. Decreased irreversible/extrinsic and reversible/intrinsic dielectric responses were observed with increasing frequency. The ratio of irreversible to reversible contributions to dielectric nonlinearity was analyzed by the Rayleigh law. This ratio decreased with increasing frequency from 500 Hz to 500 kHz.

Original language	English
Article number	072901
Journal	Applied Physics Letters
Volume	102
Issue number	7
DOIs	https://doi.org/10.1063/1.4793304
State	Published - 18 Feb 2013
Externally published	Yes

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title = "Temperature dependent polarization switching properties of ferroelectric Pb0.92La0.08Zr0.52Ti0.48O δ films grown on nickel foils",

abstract = "Ferroelectric Pb0.92La0.08Zr0.52Ti 0.48Oδ films (≈2-μm thickness) were grown on LaNiO3-buffered nickel foils by chemical solution deposition. Their ferroelectric and dielectric properties were measured as a function of temperature. With increasing temperature from room temperature to 200 °C, back-switching polarization increased while spontaneous polarization, remanent polarization, and coercive field decreased. The domain wall energy barrier was determined from the temperature-dependent back-switching polarization. Decreased irreversible/extrinsic and reversible/intrinsic dielectric responses were observed with increasing frequency. The ratio of irreversible to reversible contributions to dielectric nonlinearity was analyzed by the Rayleigh law. This ratio decreased with increasing frequency from 500 Hz to 500 kHz.",

author = "Beihai Ma and Zhongqiang Hu and Shanshan Liu and Manoj Narayanan and U. Balachandran",

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T1 - Temperature dependent polarization switching properties of ferroelectric Pb0.92La0.08Zr0.52Ti0.48O δ films grown on nickel foils

AU - Ma, Beihai

AU - Hu, Zhongqiang

AU - Liu, Shanshan

AU - Narayanan, Manoj

AU - Balachandran, U.

PY - 2013/2/18

Y1 - 2013/2/18

N2 - Ferroelectric Pb0.92La0.08Zr0.52Ti 0.48Oδ films (≈2-μm thickness) were grown on LaNiO3-buffered nickel foils by chemical solution deposition. Their ferroelectric and dielectric properties were measured as a function of temperature. With increasing temperature from room temperature to 200 °C, back-switching polarization increased while spontaneous polarization, remanent polarization, and coercive field decreased. The domain wall energy barrier was determined from the temperature-dependent back-switching polarization. Decreased irreversible/extrinsic and reversible/intrinsic dielectric responses were observed with increasing frequency. The ratio of irreversible to reversible contributions to dielectric nonlinearity was analyzed by the Rayleigh law. This ratio decreased with increasing frequency from 500 Hz to 500 kHz.

AB - Ferroelectric Pb0.92La0.08Zr0.52Ti 0.48Oδ films (≈2-μm thickness) were grown on LaNiO3-buffered nickel foils by chemical solution deposition. Their ferroelectric and dielectric properties were measured as a function of temperature. With increasing temperature from room temperature to 200 °C, back-switching polarization increased while spontaneous polarization, remanent polarization, and coercive field decreased. The domain wall energy barrier was determined from the temperature-dependent back-switching polarization. Decreased irreversible/extrinsic and reversible/intrinsic dielectric responses were observed with increasing frequency. The ratio of irreversible to reversible contributions to dielectric nonlinearity was analyzed by the Rayleigh law. This ratio decreased with increasing frequency from 500 Hz to 500 kHz.

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U2 - 10.1063/1.4793304

DO - 10.1063/1.4793304

M3 - 文章

AN - SCOPUS:84874511006

SN - 0003-6951

VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

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Temperature dependent polarization switching properties of ferroelectric Pb_0.92La_0.08Zr_0.52Ti_0.48O _δ films grown on nickel foils

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