Temperature-dependent energy storage properties of antiferroelectric Pb0.96La0.04Zr0.98Ti0.02O 3 thin films

Zhongqiang Hu; Beihai Ma; R. E. Koritala; Uthamalingam Balachandran

doi:10.1063/1.4887066

Temperature-dependent energy storage properties of antiferroelectric Pb_0.96La_0.04Zr_0.98Ti_0.02O ₃ thin films

Zhongqiang Hu
, Beihai Ma
, R. E. Koritala
, Uthamalingam Balachandran

Research output: Contribution to journal › Article › peer-review

151 Scopus citations

Abstract

The energy storage properties of antiferroelectric (AFE) Pb _0.96La_0.04Zr_0.98Ti_0.02O₃ (PLZT 4/98/2) thin films were investigated as a function of temperature and applied electric field. The results indicated that recoverable energy density (U_re) and charge-discharge efficiency (η) of PLZT (4/98/2) depend weakly on temperature (from room temperature to 225 °C), while U _re increases linearly and η decreases exponentially with increasing electric field at room temperature. These findings are explained qualitatively on the basis of the kinetics of the temperature-induced transition of AFE-to-paraelectric phase and the field-induced transition of AFE-to-ferroelectric phase, respectively. The high U_re (≈61 J/cm³) and low leakage current density (≈3.5 × 10 ^-8 and 3.5 × 10^-5 A/cm² at 25 and 225 °C, respectively) indicate that antiferroelectric PLZT (4/98/2) is a promising material for high-power energy storage.

Original language	English
Article number	263902
Journal	Applied Physics Letters
Volume	104
Issue number	26
DOIs	https://doi.org/10.1063/1.4887066
State	Published - 30 Jun 2014
Externally published	Yes

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@article{3b2d78de082a4326a1e29d71874633ee,

title = "Temperature-dependent energy storage properties of antiferroelectric Pb0.96La0.04Zr0.98Ti0.02O 3 thin films",

abstract = "The energy storage properties of antiferroelectric (AFE) Pb 0.96La0.04Zr0.98Ti0.02O3 (PLZT 4/98/2) thin films were investigated as a function of temperature and applied electric field. The results indicated that recoverable energy density (Ure) and charge-discharge efficiency (η) of PLZT (4/98/2) depend weakly on temperature (from room temperature to 225 °C), while U re increases linearly and η decreases exponentially with increasing electric field at room temperature. These findings are explained qualitatively on the basis of the kinetics of the temperature-induced transition of AFE-to-paraelectric phase and the field-induced transition of AFE-to-ferroelectric phase, respectively. The high Ure (≈61 J/cm3) and low leakage current density (≈3.5 × 10 -8 and 3.5 × 10-5 A/cm2 at 25 and 225 °C, respectively) indicate that antiferroelectric PLZT (4/98/2) is a promising material for high-power energy storage.",

author = "Zhongqiang Hu and Beihai Ma and Koritala, \{R. E.\} and Uthamalingam Balachandran",

year = "2014",

month = jun,

day = "30",

doi = "10.1063/1.4887066",

language = "英语",

volume = "104",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "26",

}

TY - JOUR

T1 - Temperature-dependent energy storage properties of antiferroelectric Pb0.96La0.04Zr0.98Ti0.02O 3 thin films

AU - Hu, Zhongqiang

AU - Ma, Beihai

AU - Koritala, R. E.

AU - Balachandran, Uthamalingam

PY - 2014/6/30

Y1 - 2014/6/30

N2 - The energy storage properties of antiferroelectric (AFE) Pb 0.96La0.04Zr0.98Ti0.02O3 (PLZT 4/98/2) thin films were investigated as a function of temperature and applied electric field. The results indicated that recoverable energy density (Ure) and charge-discharge efficiency (η) of PLZT (4/98/2) depend weakly on temperature (from room temperature to 225 °C), while U re increases linearly and η decreases exponentially with increasing electric field at room temperature. These findings are explained qualitatively on the basis of the kinetics of the temperature-induced transition of AFE-to-paraelectric phase and the field-induced transition of AFE-to-ferroelectric phase, respectively. The high Ure (≈61 J/cm3) and low leakage current density (≈3.5 × 10 -8 and 3.5 × 10-5 A/cm2 at 25 and 225 °C, respectively) indicate that antiferroelectric PLZT (4/98/2) is a promising material for high-power energy storage.

AB - The energy storage properties of antiferroelectric (AFE) Pb 0.96La0.04Zr0.98Ti0.02O3 (PLZT 4/98/2) thin films were investigated as a function of temperature and applied electric field. The results indicated that recoverable energy density (Ure) and charge-discharge efficiency (η) of PLZT (4/98/2) depend weakly on temperature (from room temperature to 225 °C), while U re increases linearly and η decreases exponentially with increasing electric field at room temperature. These findings are explained qualitatively on the basis of the kinetics of the temperature-induced transition of AFE-to-paraelectric phase and the field-induced transition of AFE-to-ferroelectric phase, respectively. The high Ure (≈61 J/cm3) and low leakage current density (≈3.5 × 10 -8 and 3.5 × 10-5 A/cm2 at 25 and 225 °C, respectively) indicate that antiferroelectric PLZT (4/98/2) is a promising material for high-power energy storage.

UR - https://www.scopus.com/pages/publications/84905647720

U2 - 10.1063/1.4887066

DO - 10.1063/1.4887066

M3 - 文章

AN - SCOPUS:84905647720

SN - 0003-6951

VL - 104

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

M1 - 263902

ER -

Temperature-dependent energy storage properties of antiferroelectric Pb_0.96La_0.04Zr_0.98Ti_0.02O ₃ thin films

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