Abstract
The temperature dependence of the piezotronic and piezophototronic effects in a-axis GaN nanobelts from 77 to 300 K is investigated. The piezotronic effect is enhanced by over 440% under lower temperatures. Two independent processes are discovered to form a competing mechanism through the investigation of the temperature dependence of the piezophototronic effect in a-axis GaN nanobelts.
| Original language | English |
|---|---|
| Pages (from-to) | 8067-8074 |
| Number of pages | 8 |
| Journal | Advanced Materials |
| Volume | 27 |
| Issue number | 48 |
| DOIs | |
| State | Published - 22 Dec 2015 |
| Externally published | Yes |
Keywords
- a-axis
- gallium nitride
- piezophototronic effects
- piezotronic effects
- temperature dependence
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