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Temperature Dependence of the Piezotronic and Piezophototronic Effects in a-axis GaN Nanobelts

  • Xingfu Wang
  • , Ruomeng Yu
  • , Wenbo Peng
  • , Wenzhuo Wu
  • , Shuti Li
  • , Zhong Lin Wang
  • Georgia Institute of Technology
  • South China Normal University
  • Chinese Academy of Sciences

Research output: Contribution to journalArticlepeer-review

67 Scopus citations

Abstract

The temperature dependence of the piezotronic and piezophototronic effects in a-axis GaN nanobelts from 77 to 300 K is investigated. The piezotronic effect is enhanced by over 440% under lower temperatures. Two independent processes are discovered to form a competing mechanism through the investigation of the temperature dependence of the piezophototronic effect in a-axis GaN nanobelts.

Original languageEnglish
Pages (from-to)8067-8074
Number of pages8
JournalAdvanced Materials
Volume27
Issue number48
DOIs
StatePublished - 22 Dec 2015
Externally publishedYes

Keywords

  • a-axis
  • gallium nitride
  • piezophototronic effects
  • piezotronic effects
  • temperature dependence

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